Optical Waveguides in LiNbO3 Produced by Ti In-diffusion, Ion Exchange and Ion Implantation

1987 ◽  
pp. 179-194 ◽  
Author(s):  
A. Carnera
Keyword(s):  
Ion Exchange ◽  
Ion Implantation ◽  
Optical Waveguides

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Planar optical waveguides in Nd:BSO crystals fabricated by He and C ion implantation

2011 ◽  
Vol 33 (3) ◽  
pp. 385-388 ◽  
Author(s):  
Tao Liu ◽  
Sha-Sha Guo ◽  
Jin-Hua Zhao ◽  
Jing Guan ◽  
Xue-Lin Wang
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
Planar Optical Waveguides

Monomode channel waveguide in KTiOPO4 crystal produced by Rb+ ion exchange combined with Si+ ion implantation

2010 ◽  
Vol 99 (1-2) ◽  
pp. 203-207 ◽  
Author(s):  
L.-L. Wang ◽  
K.-M. Wang ◽  
X.-Z. Liu ◽  
Q.-M. Lu
Keyword(s):  
Ion Exchange ◽  
Ion Implantation ◽  
Channel Waveguide ◽  
Si Ion Implantation

Nonleaky optical waveguides in KNbO3by ultralow dose MeV He ion implantation

1991 ◽  
Vol 59 (26) ◽  
pp. 3354-3356 ◽  
Author(s):  
F. P. Strohkendl ◽  
D. Fluck ◽  
P. Günter ◽  
R. Irmscher ◽  
Ch. Buchal
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
Ultralow Dose

Optical waveguides made by ion exchange in glass. Application to two dimensions integrated optical devices

1982 ◽  
Vol 47 (2) ◽  
pp. 259-261 ◽  
Author(s):  
G.H. Chartier ◽  
J.L. Coutaz ◽  
A. Girod ◽  
P. Jaussaud ◽  
O. Parriaux
Keyword(s):  
Ion Exchange ◽  
Optical Waveguides ◽  
Optical Devices ◽  
Two Dimensions ◽  
Integrated Optical ◽  
Integrated Optical Devices

The formation of optical waveguide in KTP crystal by combining ion implantation with ion exchange

2009 ◽  
Author(s):  
Xianbing Ming ◽  
Fei Lu ◽  
Xiaomei Wang ◽  
Ming Chen ◽  
Xiangzhi Liu
Keyword(s):  
Ion Exchange ◽  
Ion Implantation ◽  
Optical Waveguide ◽  
Ktp Crystal

Formation of nonlinear optical waveguides by using ion-exchange and implantation techniques

1996 ◽  
Vol 116 (1-4) ◽  
pp. 507-510 ◽  
Author(s):  
G.W. Arnold ◽  
G. De Marchi ◽  
F. Gonella ◽  
P. Mazzoldi ◽  
A. Quaranta ◽  
...  
Keyword(s):  
Ion Exchange ◽  
Optical Waveguides ◽  
Nonlinear Optical ◽  
Implantation Techniques
Sign in / Sign up

Export Citation Format

Share Document