Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Solid-Phase Epitaxy of Ti-Implanted LiNbO3

1987 ◽  
Vol 93 ◽  
Author(s):  
D. B. Poker
Keyword(s):  
Activation Energy ◽  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Liquid Nitrogen Temperature ◽  
Index Of Refraction ◽  
Optical Index ◽  
Epitaxial Regrowth ◽  
Residual Damage ◽  
Water Saturated

ABSTRACTThe implantation of Ti into LiNbO3 has been studied as a means of altering the optical index of refraction to produce optical waveguides. Implanting 2 × 1017 atoms/cm2 of 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 4000 Å. Solid-phase epitaxial regrowth of the LiNbO3 can be achieved by annealing in a water-saturated oxygen atmosphere at 400°C, though complete removal of the residual damage usually requires temperatures in excess of 800°C. The solid-phase epitaxial regrowth rate exhibits an activation energy of 2 eV at doses below 3 × 1016 Ti/cm2, but both the regrowth rate and activation energy decrease at higher doses. At doses above 1 × 1017 Ti/cm2, the solid-phase epitaxial regrowth occurs only at temperatures above 800°C.

Solid-phase epitaxy of Ti-implanted LiNbO3

1989 ◽  
Vol 4 (2) ◽  
pp. 412-416 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Amorphous Region ◽  
Liquid Nitrogen Temperature ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Complete Recrystallization ◽  
Water Saturated ◽  
Saturated Oxygen

The solid-phase epitaxy of LiNbO3 following ion implantation of Ti dopant for the purpose of producing optical waveguides has been studied. Implanting 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 400 nm. This essentially amorphous region can be recrystallized epitaxially by annealing in a water-saturated oxygen atmosphere at temperatures near 400 °C. though complete removal of all irradiation-induced damage requires temperatures in excess of 600 °C. The activation energy of the regrowth is 2.0 eV for implanted fluences below 3 ⊠ 1016 Ti/cm2. At higher fluences the regrowth proceeds more slowly, and Ti dopant segregates at the regrowth interface. Complete recrystallization following high-dose implantation requires annealing temperatures in excess of 800 °C.

Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

2008 ◽  
Vol 1070 ◽  
Author(s):  
Brett Cameron Johnson ◽  
Paul Gortmaker ◽  
Jeffrey C. McCallum
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Fermi Level ◽  
Concentration Profile ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Temperature Range ◽  
Kinetics Of

ABSTRACTThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

scholarly journals Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 987 ◽  
Author(s):  
Evgeniy Chusovitin ◽  
Sergey Dotsenko ◽  
Svetlana Chusovitina ◽  
Dmitry Goroshko ◽  
Anton Gutakovskii ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
20 Nm

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9–16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb ( 111 ) ||Si ( 11 1 ¯ ) and GaSb [ 11 2 ¯ ] ||Si [ 1 1 ¯ 0 ] , GaSb ( 113 ) ||Si ( 11 1 ¯ ) and GaSb [ 1 1 ¯ 0 ] ||Si [ 1 1 ¯ 0 ] , and GaSb ( 11 1 ¯ ) ||Si ( 002 ) and GaSb [ 1 1 ¯ 0 ] ||Si [ 1 1 ¯ 0 ] .

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

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