High-Speed Phenomena in GaAs Multiple-Quantum-Well Structures

Author(s):  
A. Mysyrowicz ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
H. M. Gibbs ◽  
...  
1997 ◽  
Vol 08 (04) ◽  
pp. 587-598 ◽  
Author(s):  
Ching-Ting Lee ◽  
Tzer-En Nee

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

1989 ◽  
Vol 55 (6) ◽  
pp. 583-585 ◽  
Author(s):  
M. Wegener ◽  
T. Y. Chang ◽  
I. Bar‐Joseph ◽  
J. M. Kuo ◽  
D. S. Chemla

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  

2007 ◽  
Vol 91 (23) ◽  
pp. 231103 ◽  
Author(s):  
S. Sadofev ◽  
S. Kalusniak ◽  
J. Puls ◽  
P. Schäfer ◽  
S. Blumstengel ◽  
...  

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