Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes

Author(s):  
Okba Saidani ◽  
Souad Tobbeche ◽  
Elhadj Dogheche ◽  
Bandar Alshehri
1989 ◽  
Vol 25 (18) ◽  
pp. 1245 ◽  
Author(s):  
H.D. Wolf ◽  
H. Lang ◽  
L. Korte

2006 ◽  
Author(s):  
Sylvain Maine ◽  
Delphine Marris-Morini ◽  
Laurent Vivien ◽  
Daniel Pascal ◽  
Eric Cassan ◽  
...  

1994 ◽  
Vol 7 (3) ◽  
pp. 152-159
Author(s):  
T. Fukushima ◽  
N. Matsumoto ◽  
H. Nakayama ◽  
Y. Ikegami ◽  
T. Namegaya ◽  
...  

1999 ◽  
Author(s):  
Keith Kang ◽  
Jeffry S. Powell ◽  
Richard D. Stack ◽  
Charles G. Garvin ◽  
John A. Trezza ◽  
...  

Author(s):  
A. Mysyrowicz ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
H. M. Gibbs ◽  
...  

Author(s):  
Charles Garvin ◽  
John Alfred Trezza ◽  
John S. Aheam ◽  
Keith Kang ◽  
Jeffry S. Powell ◽  
...  

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.


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