Parallel and Perpendicular Field Magnetotransport Studies of MBE Grown GaAs Doping Superlattices and Slab Doped InSb Formed by Selective Doping with Silicon

1989 ◽  
pp. 199-206
Author(s):  
R. Droopad ◽  
S. D. Parker ◽  
E. Skuras ◽  
R. A. Stradling ◽  
R. L. Williams ◽  
...  
Keyword(s):  
Selective Doping ◽  
Doping With Silicon ◽  
Perpendicular Field

scholarly journals A perpendicular field electromagnet with a 250 mm access bore

2021 ◽  
Vol 92 (1) ◽  
pp. 015102
Author(s):  
A. P. Petrović ◽  
B. H. M. Smit ◽  
K. L. Fong ◽  
B. Satywali ◽  
X. Y. Tee ◽  
...  
Keyword(s):  
Perpendicular Field

scholarly journals Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Characteristics ◽  
Nonradiative Recombination ◽  
Photovoltaic Devices ◽  
Electron Population ◽  
Selective Doping ◽  
Intersubband Absorption ◽  
Novel Approach ◽  
N Doping

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.

Energy characteristics of boron impurity in Si∕Si1−xGex heterostructures with on-center and on-edge selective doping of quantum wells

2007 ◽  
Vol 33 (10) ◽  
pp. 869-871 ◽  
Author(s):  
V. V. Vainberg ◽  
Yu. N. Gudenko ◽  
V. N. Poroshin ◽  
V. N. Tulupenko ◽  
N. N. Cheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Characteristics ◽  
Selective Doping

Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

1993 ◽  
Vol 22 (5) ◽  
pp. 463-466 ◽  
Author(s):  
Ziqiang Zhu ◽  
Takafumi Yao ◽  
Hiroshi Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Doping

MBE synthesis of (In,Mn)As quantum dots using Mn selective doping

2017 ◽  
Vol 468 ◽  
pp. 680-682 ◽  
Author(s):  
Alexei Bouravleuv ◽  
Victor Sapega ◽  
Vladimir Nevedomskii ◽  
Artem Khrebtov ◽  
Yuriy Samsonenko ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Selective Doping
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