Magneto-Optics of Diluted Magnetic Semiconductors: New Materials and Applications

Author(s):  
K. Ando
1989 ◽  
Vol 161 ◽  
Author(s):  
N. Samarth ◽  
J. K. Furdyna

ABSTRACTMuch of the work in diluted magnetic semiconductors (DMS) in past years has focused on the alloys such as Cd1−xMnxTe. Recently, there has been an increasing accent on DMS alloys containing the transition metal ions Fe2+ and Co2+. We review here the properties of these new materials and compare them with the alloys. We also examine the novel opportunities afforded by the molecular beam epitaxy of epilayers and heterostructures containing the “metastable” zinc-blende phase of Cd1−xMnxSe.


1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk

2009 ◽  
Vol 24 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Xue-Chao LIU ◽  
Zhi-Zhan CHEN ◽  
Er-Wei SHI ◽  
Li-Xin SONG

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.


1982 ◽  
Vol 53 (11) ◽  
pp. 7644-7648 ◽  
Author(s):  
G. Dolling ◽  
T. M. Holden ◽  
V. F. Sears ◽  
J. K. Furdyna ◽  
W. Giriat

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