In-situ observation and surface morphology of YBa2Cu3O7-y films by metalorganic chemical vapor deposition

1999 ◽  
pp. 1089-1092 ◽  
Author(s):  
Yutaka Yoshida ◽  
Morihiro Iwata ◽  
Masato Hasegawa ◽  
Kenichi Tamura ◽  
Koji Ishizawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Observation ◽  
Metalorganic Chemical

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

2008 ◽  
Vol 310 (23) ◽  
pp. 5166-5169 ◽  
Author(s):  
Jianping Liu ◽  
Jae-Hyun Ryou ◽  
Zachary Lochner ◽  
Jae Limb ◽  
Dongwon Yoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Morphology Control ◽  
Metalorganic Chemical ◽  
Green Leds

scholarly journals High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065301
Author(s):  
Shuo Zhang ◽  
Ping Ma ◽  
Boting Liu ◽  
Dongxue Wu ◽  
Yuliang Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Periodic Growth ◽  
Metalorganic Chemical

Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etching

1993 ◽  
Vol 134 (1-2) ◽  
pp. 35-42 ◽  
Author(s):  
Hirotaka Kizuki ◽  
Norio Hayafuji ◽  
Nariaki Fujii ◽  
Nobuaki Kaneno ◽  
Yutaka Mihashi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Hcl Gas ◽  
Metalorganic Chemical
Sign in / Sign up

Export Citation Format

Share Document