Carrier Doping and Superconductivity in Cuprates of Infinite-Layer and Related Structures

1994 ◽  
pp. 291-296 ◽  
Author(s):  
H. Yamauchi
Keyword(s):  
Infinite Layer ◽  
Carrier Doping

Carrier doping in the infinite-layer compound Ca0.86Sr0.14CuO2

1994 ◽  
Vol 155 (1) ◽  
pp. 121-126
Author(s):  
Tsuneo Watanabe ◽  
Hiroaki Ogawa ◽  
Ichiro Shiono ◽  
Taro Tonozuka ◽  
Jun Hatano
Keyword(s):  
Layer Compound ◽  
Infinite Layer ◽  
Carrier Doping

Mechanism of Carrier Doping in the Superconducting Infinite-Layer Compound A1−xCuO2−z (A=Ca1−ySry)

1993 ◽  
pp. 211-214 ◽  
Author(s):  
Zenji Hiroi ◽  
Masaki Azuma ◽  
Mikio Takano ◽  
Yasuo Takeda
Keyword(s):  
Layer Compound ◽  
Infinite Layer ◽  
Carrier Doping

NONSTOICHIOMETRY CONTROL AND CARRIER DOPING OF INFINITE-LAYER CUPRATE FILMS

1994 ◽  
pp. 505-508
Author(s):  
M. Inoue ◽  
M. Yoshimoto ◽  
H. Ohkubo ◽  
H. Koinuma
Keyword(s):  
Infinite Layer ◽  
Cuprate Films ◽  
Carrier Doping

scholarly journals Defect formation and carrier doping in epitaxial films of the infinite layer compound

1996 ◽  
Author(s):  
Ron Feenstra ◽  
Stephen J. Pennycook ◽  
M. F. Chisholm ◽  
N. D. Browning ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Defect Formation ◽  
Epitaxial Films ◽  
Layer Compound ◽  
Infinite Layer ◽  
Carrier Doping

P-type carrier doping in ACuO2 infinite-layer thin film

1994 ◽  
Vol 232 (3-4) ◽  
pp. 371-378 ◽  
Author(s):  
H. Yakabe ◽  
A. Kume ◽  
J.G. Wen ◽  
M. Kosuge ◽  
Y. Shiohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Infinite Layer ◽  
Carrier Doping ◽  
Layer Thin Film ◽  
P Type

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

scholarly journals Optical Properties of the Infinite-Layer La1−xSrxNiO2 and Hidden Hund’s Physics

2021 ◽  
Vol 126 (12) ◽  
Author(s):  
Chang-Jong Kang ◽  
Gabriel Kotliar
Keyword(s):  
Optical Properties ◽  
Infinite Layer
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