Carrier Doping and Superconductivity in Cuprates of Infinite-Layer and Related Structures

1994 ◽  
pp. 291-296 ◽  
Author(s):  
H. Yamauchi
1994 ◽  
Vol 155 (1) ◽  
pp. 121-126
Author(s):  
Tsuneo Watanabe ◽  
Hiroaki Ogawa ◽  
Ichiro Shiono ◽  
Taro Tonozuka ◽  
Jun Hatano

1996 ◽  
Author(s):  
Ron Feenstra ◽  
Stephen J. Pennycook ◽  
M. F. Chisholm ◽  
N. D. Browning ◽  
J. D. Budai ◽  
...  

1994 ◽  
Vol 232 (3-4) ◽  
pp. 371-378 ◽  
Author(s):  
H. Yakabe ◽  
A. Kume ◽  
J.G. Wen ◽  
M. Kosuge ◽  
Y. Shiohara ◽  
...  

Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.


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