Influence of Oxygen Partial Pressure on Hydroxyapatite Coating of Additive Manufactured Component by Pulsed Laser Deposition

2016 ◽  
pp. 55-64
Author(s):  
K. Hariharan ◽  
G. Arumaikkannu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Hydroxyapatite Coating

Structural and Optical Properties of VO2 Film Grown on Sapphire Substrate by Pulsed Laser Deposition

2014 ◽  
Vol 912-914 ◽  
pp. 325-328 ◽  
Author(s):  
Ji Ming Bian ◽  
Li Hua Miao ◽  
Shu Kuo Zhao
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Optical Transmission ◽  
Pulsed Laser ◽  
Blue Emission ◽  
Laser Deposition ◽  
Structural And Optical Properties

VO2films were grown on sapphire substrates by pulsed laser deposition (PLD), and the structural and optical properties of as-grown films were investigated by X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), photoluminescence (PL), and optical-transmission measurements. The oxygen partial pressure in the growth chamber was found to be the key factor deciding the microstructure and properties of as-deposited VO2films, and its effects and corresponding mechanism were investigated systemically. Results indicated that dense and uniform VO2films with smooth surface were achieved by PLD under optimized oxygen partial pressure. Strong blue emission peaks were observed in room temperature photoluminescence (PL) spectra. Excellent selective optical-transmission of the VO2thin films from 200~3000 nm were also recorded at room temperature.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Effect of oxygen partial pressure on the Fermi level of ZnO1−x films fabricated by pulsed laser deposition

2010 ◽  
Vol 96 (20) ◽  
pp. 201907 ◽  
Author(s):  
Chul-Hee Min ◽  
Suyeon Cho ◽  
Seung-Hyuk Lee ◽  
Deok-Yong Cho ◽  
Won Goo Park ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Fermi Level ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Epitaxial Magnetic Garnet Thin Films and Heterostructures by Pulsed Laser Deposition

1994 ◽  
Vol 341 ◽  
Author(s):  
B. M. Simion ◽  
R. Ramesh ◽  
V. G. Keramidas ◽  
R. L. Pfeffer ◽  
G. Thomas ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gadolinium Gallium Garnet ◽  
Rutherford Back Scattering ◽  
Single Crystalline ◽  
Iron Garnet

AbstractEpitaxial yttrium-iron-garnet (YIG) films, bismuth-iron-garnet (BIG) films, and YIG/BIG heterostructures have been grown on [111] oriented single crystalline gadolinium-gallium-garnet (GGG) substrates by pulsed laser deposition (PLD), using a KrF excimer laser system. The films under study were grown over a range of temperatures from 600°C to 800°C and at 100 mTorr oxygen partial pressure. The effects of oxygen partial pressure during cooling on the structure, composition and magnetic properties of the films were investigated, employing X-ray diffraction, Rutherford back scattering spectroscopy coupled with He ion channeling, and vibration sample magnetometry. All specimens under study indicated that, independent of the film-substrate mismatch, the grown films were single crystalline in the [111] orientation. Preliminary studies on the effects of cooling oxygen partial pressure on the film structure indicate an increase in lattice distortion in the direction normal to the film surface with decreasing pressure. The magnetic properties of the films are comparable to the YIG bulk properties, and all films indicated in plane preferential magnetization, independent of cooling conditions.

Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

2003 ◽  
Vol 18 (8) ◽  
pp. 1753-1756 ◽  
Author(s):  
Woong Choi ◽  
Tim Sands
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Oxygen ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Grain Structures ◽  
Effect Of Oxygen

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. McKnight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in an continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

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