EMC Test Verification of Spacecraft Electronic Equipment

Author(s):  
Hua Zhang ◽  
Yuting Zhang ◽  
Chengbo Huang ◽  
Yanxing Yuan ◽  
Lili Cheng
2015 ◽  
Vol 742 ◽  
pp. 355-359
Author(s):  
Ji Ling Tang ◽  
Nian Feng Li ◽  
Hong Liang Liu

According to the characteristics of the large equipment, electromagnetic interference, using neural network method is put forward a set of for large electronic equipment electromagnetic coupling and interference, the analysis of the expert system based on the large electronic equipment as analysis object, the common interference on the interference classification and coding, the BP neural network is constructed, using neural network, the inference mechanism of expert system for the optimization design, and test verification.


2013 ◽  
Vol 313-314 ◽  
pp. 281-286
Author(s):  
Ming Xu ◽  
Feng Ming Lu ◽  
Chen Hui Zeng

In the new era, the reliability technology based on physics of failure (PoF) is playing an increasingly important role in development of electronic equipment. PoF models of electronic products, as the foundation and core of this advanced technology, are the main point of engineering application. With continual scaling of VLSI in electronic equipment, the electric field across gate oxide becomes higher and higher and affects the reliability of semiconductor device greatly. In this paper, TDDB failure mechanism and Physics-of-Failure model was researched firstly. Then the test sample was designed and processed, and the test verification program for TDDB Physics-of-Failure model was carried out to develop the test verification, collect and process test data. Through analyzing test data, the parameters of TDDB model were determined and modified to ensure the Physics-of-Failure model precision and the model could be used in engineering. Based on modified model, the reliability of integrated circuits can be evaluated at designing stage. And the inherent reliability of integrated circuits in electronic equipment could be improved by design optimization to reduce the risk in the process of using.


Author(s):  
Jinpeng Yang ◽  
Guangyao Lian ◽  
Junxian Wang ◽  
Ting Ye ◽  
Lei Wang

Author(s):  
Vannessa Goodship ◽  
Ab Stevels
Keyword(s):  

2010 ◽  
Vol E93-B (7) ◽  
pp. 1788-1796 ◽  
Author(s):  
Takanori UNO ◽  
Kouji ICHIKAWA ◽  
Yuichi MABUCHI ◽  
Atsushi NAKAMURA ◽  
Yuji OKAZAKI ◽  
...  

2007 ◽  
Vol 38 (3) ◽  
pp. 245-258 ◽  
Author(s):  
Leonid L. Vasiliev ◽  
Andrei G. Kulakov ◽  
L. L. Vasiliev, Jr ◽  
Mikhail I. Rabetskii ◽  
A. A. Antukh

Author(s):  
Katsumi Hisano ◽  
Hideo Iwasaki ◽  
Masaru Ishizuka

Author(s):  
J. P. Lejannou ◽  
M. Cadre ◽  
A. Latrobe ◽  
A. Viault

2011 ◽  
Vol 70 (8) ◽  
pp. 731-734 ◽  
Author(s):  
N. D. Koshevoy ◽  
E. M. Kostenko ◽  
V. A. Gordienko ◽  
V. P. Syroklyn
Keyword(s):  

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