Dielectric Material-Based Topology Optimization for Nano-Optics

2022 ◽  
pp. 49-94
Author(s):  
Yongbo Deng
Keyword(s):  
Topology Optimization ◽  
Dielectric Material

Topology Optimization of IPM Motors using Fourier Series

2017 ◽  
Vol 137 (3) ◽  
pp. 245-253
Author(s):  
Hidenori Sasaki ◽  
Hajime Igarashi
Keyword(s):  
Fourier Series ◽  
Topology Optimization

Topology Optimization of Superconducting Electromagnets for Particle Accelerators

2019 ◽  
Vol 139 (9) ◽  
pp. 568-575
Author(s):  
Yusuke Sakamoto ◽  
Daisuke Ishizuka ◽  
Tetsuya Matsuda ◽  
Kazuhiro Izui ◽  
Shinji Nishiwaki
Keyword(s):  
Topology Optimization ◽  
Particle Accelerators

Topology Optimization using Deep Learning

2020 ◽  
Vol 140 (12) ◽  
pp. 858-865
Author(s):  
Hidenori Sasaki ◽  
Yuki Hidaka ◽  
Hajime Igarashi
Keyword(s):  
Deep Learning ◽  
Topology Optimization

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

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