Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the ?100? and the ?110? projection

1993 ◽  
Vol 57 (5) ◽  
pp. 393-400 ◽  
Author(s):  
T. Walther ◽  
D. Gerthsen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Quantitative Characterization ◽  
Transmission Electron

Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

1999 ◽  
Vol 74 (22) ◽  
pp. 3287-3289 ◽  
Author(s):  
M. Arlery ◽  
J. L. Rouvière ◽  
F. Widmann ◽  
B. Daudin ◽  
G. Feuillet ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Quantum Dot ◽  
Quantitative Characterization ◽  
Transmission Electron

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

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