Surface analysis by work function measurements in a Scanning Auger Microprobe

1987 ◽  
Vol 329 (2-3) ◽  
pp. 195-200 ◽  
Author(s):  
G. Bachmann ◽  
H. Oechsner ◽  
J. Scholtes
Keyword(s):  
Work Function ◽  
Surface Analysis ◽  
Scanning Auger Microprobe

Application of Surface Photovoltage Spectroscopy in Surface Analysis

1992 ◽  
Vol 261 ◽  
Author(s):  
Iain D. Baikie ◽  
Eimert Venderbosch ◽  
Birgitta Hall
Keyword(s):  
Work Function ◽  
Surface Analysis ◽  
Electron Affinity ◽  
Surface Photovoltage ◽  
Semiconductor Surface ◽  
Temperature Dependent ◽  
Band Bending ◽  
Surface Photovoltage Spectroscopy ◽  
Wide Range

ABSTRACTExtension of the Kelvin probe vibrating capacitor technique of measuring work function, via Illumination of the semiconductor surface, i.e., Surface Photovoltage Spectroscopy (SPS), has many potential applications in the field of surface analysis.The combination of broad-band (white) and monochromatic radiation, together with measurement of the dark signal permits complete characterisation of the semiconductor work function via determination of the electron-affinity, surface potential and Local DensIty-of-States (LDOS). The work function is an extremely sensitive indicator of a wide range of surface processes, e.g., particle adsorption, stress, defect creation, phase-transitions, etc.We Illustrate application of this technique in the study of the temperature dependent initial oxidation behaviour of p-type Si(111) 7×7 between 100 and 300 K. The SPV response of the clean surface at 100 K corresponds to the capture of photo-stimulated electrons by a band of surface states centered around 1.4, 1.7, 1.9 and 2.4 eV. This response completely disappears at the peak of the (dark) work function change (0.3L) corresponding to a near complete removal of dangling bond states. The temperature-dependent white-light SPS response permits determination of the band-bending throughout the adsorption process. We observe that at 100 K the band-bending substantially decreases during the initial adsorption phase (0.1 L), after this dose it remains constant. However at 300 K the band-bending decreases much later, i.e., >10 L, in conjunction with oxygen permeation through the surface layer.In conclusion Surface Photovoltage Spectroscopy SPS is a simple and flexible method which can be used to follow the rather complex changes occurring at the semiconductor surface. It is a non-contact, nondestructive technique which allows simultaneous determination of both semiconductor band-bending and electron affinity.

Work function measurements and their relation to modern surface analysis techniques

1983 ◽  
Vol 11 (2-3) ◽  
pp. 199-206 ◽  
Author(s):  
G.A. Haas ◽  
R.E. Thomas ◽  
A. Shih ◽  
C.R.K. Marrian
Keyword(s):  
Work Function ◽  
Surface Analysis ◽  
Analysis Techniques ◽  
Surface Analysis Techniques

Dependence of the Work Function of TiO2(Rutile) on Crystal Faces, Studied by a Scanning Auger Microprobe

2007 ◽  
Vol 111 (5) ◽  
pp. 2128-2132 ◽  
Author(s):  
Akihito Imanishi ◽  
Etsushi Tsuji ◽  
Yoshihiro Nakato
Keyword(s):  
Work Function ◽  
Scanning Auger Microprobe ◽  
Tio2 Rutile

Surface reactions observed by photoemission electron microscopy (PEEM)

1992 ◽  
Vol 50 (1) ◽  
pp. 286-287
Author(s):  
H.H. Rotermund
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Work Function ◽  
Chemical Reactions ◽  
Reaction Diffusion ◽  
Dynamic Processes ◽  
Clean Surface ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Photoemission Electron

Chemical reactions at a surface will in most cases show a measurable influence on the work function of the clean surface. This change of the work function δφ can be used to image the local distributions of the investigated reaction,.if one of the reacting partners is adsorbed at the surface in form of islands of sufficient size (Δ>0.2μm). These can than be visualized via a photoemission electron microscope (PEEM). Changes of φ as low as 2 meV give already a change in the total intensity of a PEEM picture. To achieve reasonable contrast for an image several 10 meV of δφ are needed. Dynamic processes as surface diffusion of CO or O on single crystal surfaces as well as reaction / diffusion fronts have been observed in real time and space.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Surface Analysis of Polymers by XPS and Static SIMS

1998 ◽  
Author(s):  
D. Briggs
Keyword(s):  
Surface Analysis

State of the conduction electrons and the work function of a metal

1994 ◽  
Vol 164 (4) ◽  
pp. 375 ◽  
Author(s):  
B.V. Vasil'ev ◽  
M.I. Kaganov ◽  
V.L. Lyuboshits
Keyword(s):  
Work Function ◽  
Conduction Electrons

Work Function for Applications

2009 ◽  
Vol 129 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
Michiko Yoshitake ◽  
Shinjiro Yagyu
Keyword(s):  
Work Function

Signal Processing and Physiological Modeling-Part I: Surface Analysis

2002 ◽  
Vol 30 (1-3) ◽  
pp. 9-35 ◽  
Author(s):  
Jean-Louis Coatrieux
Keyword(s):  
Signal Processing ◽  
Surface Analysis ◽  
Physiological Modeling
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