Two-photon absorption in V2O5 single crystals with Q-switched ruby laser pulses

1985 ◽  
Vol 37 (4) ◽  
pp. 247-249 ◽  
Author(s):  
J. S. Bakos ◽  
I. B. F�ldes ◽  
I. Hevesi ◽  
J. Kov�cs ◽  
L. N�nai ◽  
...  
JETP Letters ◽  
2019 ◽  
Vol 109 (6) ◽  
pp. 382-386 ◽  
Author(s):  
S. I. Kudryashov ◽  
P. A. Danilov ◽  
S. G. Bezhanov ◽  
A. A. Rudenko ◽  
A. A. Ionin ◽  
...  

2017 ◽  
Vol 5 (14) ◽  
pp. 3579-3584 ◽  
Author(s):  
Oriana I. Avila ◽  
Juliana M. P. Almeida ◽  
Franciele R. Henrique ◽  
Ruben D. Fonseca ◽  
Gustavo F. B. Almeida ◽  
...  

Conversion of PTHT into PPV is achieved by direct laser writing. Fs-laser pulses induce photo-thermal reactions due to two-photon absorption, resulting in the microscopic control of PPV polymerization. Such methodology is a promising way towards the fabrication of arbitrary polymeric microcircuits.


2020 ◽  
Author(s):  
Guangjian Xu ◽  
Xinyi Ren ◽  
Qucheng Miao ◽  
Ming Yan ◽  
Haifeng Pan ◽  
...  

Abstract The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3×10 -16 counts•pulse/photon 2 , 4.3×10 -15 counts•pulse/photon 2 , respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9×10 -16 counts•pulse/photon 2 . This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.


2010 ◽  
Vol 491 (1-2) ◽  
pp. 26-29 ◽  
Author(s):  
A. Majchrowski ◽  
S. Klosowicz ◽  
L.R. Jaroszewicz ◽  
M. Swirkowicz ◽  
I.V. Kityk ◽  
...  

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