Amorphous phase formation in Ti/Ni bilayer thin films by solid-state diffusion

ABSTRACTWe have compared the formation of amorphous alloys from Ni-Hf multilayer films by ion mixing and solid state diffusion. We find that ion mixing and solid state reaction produce significant differences in the composition range of the amorphous phase inside the mixed samples. Moreover, the thermochemical parameters which are of primary importance for the solid state reaction also influence the behavior of the Ni-Hf system under ion mixing.

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Growth kinetics of amorphous interlayers by solid‐state diffusion in ultrahigh vacuum deposited polycrystalline Nb and Ta thin films on (111)Si

Journal of Applied Physics ◽

10.1063/1.348744 ◽

1991 ◽

Vol 69 (4) ◽

pp. 2161-2168 ◽

Cited By ~ 64

Author(s):

J. Y. Cheng ◽

L. J. Chen

Keyword(s):

Thin Films ◽

Solid State ◽

Growth Kinetics ◽

Ultrahigh Vacuum ◽

Solid State Diffusion ◽

State Diffusion ◽

Kinetics Of

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Formation of amorphous interlayers by solid‐state diffusion in Ti thin films on epitaxial Si–Ge layers on silicon and germanium

Journal of Applied Physics ◽

10.1063/1.360474 ◽

1995 ◽

Vol 78 (11) ◽

pp. 6539-6542 ◽

Cited By ~ 10

Author(s):

J. B. Lai ◽

C. S. Liu ◽

L. J. Chen ◽

J. Y. Cheng

Keyword(s):

Thin Films ◽

Solid State ◽

Solid State Diffusion ◽

State Diffusion ◽

Silicon And Germanium

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Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited polycrystalline Gd thin films on (001)Si

Journal of Applied Physics ◽

10.1063/1.368920 ◽

1998 ◽

Vol 84 (11) ◽

pp. 6083-6087 ◽

Cited By ~ 13

Author(s):

J. C. Chen ◽

G. H. Shen ◽

L. J. Chen

Keyword(s):

Thin Films ◽

Solid State ◽

Growth Kinetics ◽

Ultrahigh Vacuum ◽

Solid State Diffusion ◽

State Diffusion ◽

Kinetics Of

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Amorphous-phase formation and initial reactions at Pt/GaAs interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088609 ◽

1991 ◽

Vol 49 ◽

pp. 858-859

Author(s):

Dae-Hong Ko ◽

Robert Sinclair

Keyword(s):

Solid State ◽

Amorphous Phase ◽

Phase Formation ◽

Compound Semiconductor ◽

Metal Compound ◽

Heat Of Mixing ◽

Semiconductor Interface ◽

Direct Demonstration ◽

State Amorphization ◽

Amorphous Phase Formation

It is now well known that many metals form a l-2nm amorphous interdiffused layer when deposited onto clean Si surface, which grows upon annealing in some systems but crystallizes into stable, or metastable, phases in others. Such behavior can be interpreted in terms of a solid-state amorphization, driven by a negative heat of mixing of the elements with the amorphous phase produced for kinetic reasons. Some metal/compound semiconductor systems also show the same reaction behavior. Though there have been some reports, using electron diffraction, on the amorphous phase formation at metal-compound semiconductor interface upon low temperature annealing, because the expected thickness might only be several atomic layers, it is clear that high resolution transmission electron microscopy (HRTEM) is the most powerful technique to study such a phase. This article reports on the amorphous phase formation and the initial stages of reaction occuring at Pt/GaAs interfaces upon annealing with HRTEM, and this is the most direct demonstration of solid state amorphization of a metal with a compound semiconductor.

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