Amorphous phase formation in Ti/Ni bilayer thin films by solid-state diffusion

1989 ◽  
Vol 8 (12) ◽  
pp. 1393-1394 ◽  
Author(s):  
Masahiro Kitada ◽  
Noboru Shimizu ◽  
Teruho Shimotsu
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Amorphous Phase Formation

Formation of AlCuFe quasicrystalline thin films by solid state diffusion

1994 ◽  
Vol 64 (4) ◽  
pp. 431-433 ◽  
Author(s):  
T. Klein ◽  
O. G. Symko
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Diffusion ◽  
State Diffusion

Amorphization of Thin Multilayer Films by Ion Mixing and Solid State Reaction

1983 ◽  
Vol 27 ◽  
Author(s):  
M. Van Rossum ◽  
U. Shreter ◽  
W. L. Johnson ◽  
M-A. Nicolet
Keyword(s):  
Solid State ◽  
Amorphous Phase ◽  
Solid State Reaction ◽  
Amorphous Alloys ◽  
Composition Range ◽  
Multilayer Films ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Thermochemical Parameters ◽  
Mixed Samples

ABSTRACTWe have compared the formation of amorphous alloys from Ni-Hf multilayer films by ion mixing and solid state diffusion. We find that ion mixing and solid state reaction produce significant differences in the composition range of the amorphous phase inside the mixed samples. Moreover, the thermochemical parameters which are of primary importance for the solid state reaction also influence the behavior of the Ni-Hf system under ion mixing.

Amorphous-phase formation and initial reactions at Pt/GaAs interfaces

1991 ◽  
Vol 49 ◽  
pp. 858-859
Author(s):  
Dae-Hong Ko ◽  
Robert Sinclair
Keyword(s):  
Solid State ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Compound Semiconductor ◽  
Metal Compound ◽  
Heat Of Mixing ◽  
Semiconductor Interface ◽  
Direct Demonstration ◽  
State Amorphization ◽  
Amorphous Phase Formation

It is now well known that many metals form a l-2nm amorphous interdiffused layer when deposited onto clean Si surface, which grows upon annealing in some systems but crystallizes into stable, or metastable, phases in others. Such behavior can be interpreted in terms of a solid-state amorphization, driven by a negative heat of mixing of the elements with the amorphous phase produced for kinetic reasons. Some metal/compound semiconductor systems also show the same reaction behavior. Though there have been some reports, using electron diffraction, on the amorphous phase formation at metal-compound semiconductor interface upon low temperature annealing, because the expected thickness might only be several atomic layers, it is clear that high resolution transmission electron microscopy (HRTEM) is the most powerful technique to study such a phase. This article reports on the amorphous phase formation and the initial stages of reaction occuring at Pt/GaAs interfaces upon annealing with HRTEM, and this is the most direct demonstration of solid state amorphization of a metal with a compound semiconductor.

scholarly journals Novel Metal Silicide Thin Films by Design via Controlled Solid-State Diffusion

2015 ◽  
Vol 27 (12) ◽  
pp. 4247-4253 ◽  
Author(s):  
Frank Streller ◽  
Rahul Agarwal ◽  
Filippo Mangolini ◽  
Robert W. Carpick
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Diffusion ◽  
Metal Silicide ◽  
State Diffusion

scholarly journals Solid-state diffusion bonding of gamma-TiAl alloys using Ti/Al thin films as interlayers

2006 ◽  
Vol 14 (10-11) ◽  
pp. 1151-1156 ◽  
Author(s):  
L.I. Duarte ◽  
A.S. Ramos ◽  
M.F. Vieira ◽  
F. Viana ◽  
M.T. Vieira ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Diffusion Bonding ◽  
Solid State Diffusion ◽  
Tial Alloys ◽  
State Diffusion
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