Aim:
To study the temperature stability of TGS doped with ZnSO4, CdCl2,
BaCl2, and compare it with that of pure TGS.
Objectives:
Synthesizing pure and doped TGS and studying their temperature dependence
using TGA, DTA, and DSC analysis.
Methods:
Slow cooling solution growth was used to grow single crystals of pure and
doped TGS. The TGA, DTA and DSC analysis was conducted for determining the temperature
stability.
Results:
The thermal analysis of pure and doped TGS shows that the doped samples show
a similar dependence on temperature as pure TGS. The temperature of decomposition of
pure and doped samples (BTGS, ZTGS, CdTGS) was 226.60°C, 228.38°C, 229.13°C, and
239.13°C respectively. The melting onset of these samples was 214.51°C, 216.04°C,
217.69°C and 216.04°C respectively.
Conclusion:
The study shows that doping TGS with the above three described materials
did not alter their temperature stability considerably. It is a good result as doping TGS, for
varying its characteristics like absorbance, reflectance, bandgap energy, etc., which did not
alter its temperature stability. Therefore, TGS doped with the above three dopants can be
used at the same temperature ranges as of pure TGS but with much-improved efficiency.
Temperature dependence of thermal expansion and elastic constants of single crystals of ZrB2 and the suitability of ZrB2 as a substrate for GaN film
