Temperature dependence of the hardening factor and the microstrain stage for polycrystalline substitutional fcc solid solutions

1974 ◽  
Vol 17 (1) ◽  
pp. 107-109
Author(s):  
L. A. Kornienko ◽  
E. F. Dudarev ◽  
V. E. Panin
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Hardening Factor

Crystal structure and temperature dependence of permittivity in barium aluminate based solid solutions

2019 ◽  
Vol 102 (12) ◽  
pp. 7480-7490 ◽  
Author(s):  
Jie Li ◽  
Xue‐Kai Lan ◽  
Kang Du ◽  
Xiao‐Qiang Song ◽  
Wen‐Zhong Lu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Barium Aluminate

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

The Anomalies in Temperature Dependence of the Yield Stress of Cu Base Solid Solutions

1971 ◽  
Vol 31 (4) ◽  
pp. 1056-1068 ◽  
Author(s):  
Koji Kamada ◽  
Isao Yoshizawa
Keyword(s):  
Temperature Dependence ◽  
Yield Stress ◽  
Solid Solutions

Pressure and temperature dependence of the hall coefficient in Cd3-xZnx As2 solid solutions

1977 ◽  
Vol 41 (1) ◽  
pp. K59-K62 ◽  
Author(s):  
J. Cisowski ◽  
W. Zdanowicz
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Hall Coefficient

Temperature Dependence ofE1 andE1 + Δ1 Maxima in the Fundamental Reflection for Cdx Hg1-xTe Solid Solutions

1975 ◽  
Vol 70 (2) ◽  
pp. 767-773 ◽  
Author(s):  
A. Kisiel ◽  
M. Podgórny ◽  
A. Rodzik ◽  
W. Giriat
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Fundamental Reflection

Concentration and temperature-dependence of the interdiffusion coefficient in the NaIKI solid solutions

1975 ◽  
Vol 9 (5) ◽  
pp. xxii
Author(s):  
Mme Y. Haget ◽  
N.B. Chanh ◽  
P. Garin ◽  
L. Bonpunt
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Interdiffusion Coefficient

Temperature dependence of the carrier lifetime in narrow-gap Cd x Hg1–x Te solid solutions: Radiative recombination

2015 ◽  
Vol 49 (9) ◽  
pp. 1170-1175 ◽  
Author(s):  
N. L. Bazhenov ◽  
K. D. Mynbaev ◽  
G. G. Zegrya
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Radiative Recombination ◽  
Carrier Lifetime ◽  
Narrow Gap

Temperature dependence of the specific heat for the CdxHg1−x Te solid solutions

2006 ◽  
Vol 49 (3) ◽  
pp. 337-339 ◽  
Author(s):  
V. N. Nikiforov ◽  
V. G. Sredin
Keyword(s):  
Specific Heat ◽  
Temperature Dependence ◽  
Solid Solutions

Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes

2015 ◽  
Vol 49 (4) ◽  
pp. 432-436 ◽  
Author(s):  
N. L. Bazhenov ◽  
K. D. Mynbaev ◽  
G. G. Zegrya
Keyword(s):  
Temperature Dependence ◽  
Solid Solutions ◽  
Carrier Lifetime ◽  
Narrow Gap
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