Electrophysical properties of anode oxide films on an indium antimonide surface

1981 ◽  
Vol 24 (4) ◽  
pp. 363-366
Author(s):  
A. N. Blagodarov ◽  
V. F. Borodzyulya ◽  
V. V. Golubev ◽  
A. A. Tarnashinskii
Keyword(s):  
Indium Antimonide ◽  
Oxide Films ◽  
Electrophysical Properties

Study of the Electrophysical Properties of Colloidal Indium Antimonide Quantum Dots

2020 ◽  
Vol 46 (4) ◽  
pp. 339-341
Author(s):  
A. I. Mikhailov ◽  
V. F. Kabanov ◽  
M. V. Gavrikov
Keyword(s):  
Quantum Dots ◽  
Indium Antimonide ◽  
Electrophysical Properties

Optical and Electrophysical Properties of Thin Zinc Oxide Films Doped with Scandium and Obtained by Laser Deposition

2020 ◽  
Vol 87 (5) ◽  
pp. 840-845
Author(s):  
N. A. Bosak ◽  
A. N. Chumakov ◽  
A. A. Shevchenok ◽  
L. V. Baran ◽  
A. G. Karoza ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
Laser Deposition ◽  
Electrophysical Properties ◽  
Zinc Oxide Films

ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE

1966 ◽  
Vol 44 (6) ◽  
pp. 641-646 ◽  
Author(s):  
A. C. Harkness ◽  
L. Young
Keyword(s):  
Optical Properties ◽  
Indium Antimonide ◽  
Oxide Films ◽  
Anodic Oxide ◽  
Crystal Face ◽  
Anodic Oxide Films ◽  
Breakdown Region ◽  
Kinetics Of Formation ◽  
Kinetics Of ◽  
Transition Voltage

The kinetics of formation of anodic oxide films on different crystal faces of single crystal indium antimonide have been investigated by measurements of charge passed, capacitance, and optical properties. Below a transition or breakdown region of voltage no difference in kinetics was found. Above this voltage a marked difference appeared. The transition voltage was found to depend on both the crystal face and the current density at which the film was formed.

The electrophysical properties of anodically grown silicon oxide films

1989 ◽  
Vol 168 (1) ◽  
pp. 51-60 ◽  
Author(s):  
G. Mende ◽  
E. Hensel ◽  
F. Fenske ◽  
H. Flietner
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Electrophysical Properties

Formation and Properties of Anodic Oxide Films on Indium Antimonide

1968 ◽  
Vol 7 (12) ◽  
pp. 1491-1496 ◽  
Author(s):  
Toshihiko Sakurai ◽  
Toshimasa Suzuki ◽  
Yoshio Noguchi
Keyword(s):  
Indium Antimonide ◽  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films

Erratum: Anodic oxide films on indium antimonide

1967 ◽  
Vol 45 (8) ◽  
pp. 888-888
Author(s):  
A. C. Harkness ◽  
L. Young
Keyword(s):  
Indium Antimonide ◽  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films

Electrophysical Properties of Metal Oxide Films Fabricated by Using Spray Pyrolysis

2020 ◽  
Vol 28 ◽  
pp. 71-77
Author(s):  
Vladimir Evgenevich Polkovnikov ◽  
Stanislav Ivanovich Rembeza ◽  
Tatiana Gennadevna Menshikova ◽  
Dmitriy Sergeevich Permyakov ◽  
Maksim Aleksandrovich Belykh
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Hall Effect ◽  
Spray Pyrolysis ◽  
Surface Resistance ◽  
Oxide Films ◽  
Electrophysical Properties ◽  
Electrical Parameters ◽  
Metal Oxide Films ◽  
Glass Substrates

This document describes the technology of manufacturing metal oxide films ZnO, SnO2, Zn2SnO4 from aqueous solutions of the corresponding salts by spray pyrolysis. The modes and conditions of deposition of metal oxide films on hot (420 °C) glass substrates are given. The electrical parameters of the films were measured by the van der Pau method and by the Hall effect, the surface resistance was in the range from 140 to 85⋅103 Ohm/. The band gap was determined by light absorption spectra and was within 3.2...3.5 eV. For all metal oxides, the n-type conductivity was determined using the thermosonde and the Hall effect.

scholarly journals Influence of annealing on structure, phase and electrophysical properties of vanadium oxide films

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (3) ◽  
pp. 22-30
Author(s):  
T. D. Nguen ◽  
A. I. Zanko ◽  
D. A. Golosov ◽  
S. M. Zavadski ◽  
S. N. Melnikov ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Oxide Films ◽  
Electrophysical Properties ◽  
Structure Phase ◽  
Vanadium Oxide Films
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