Some evidence for the validity of the noise-temperature inequality? ?T in the relaxation approximation of the one-dimensional electron transport problem in high electric fields

1974 ◽  
Vol 11 (5) ◽  
pp. 421-431 ◽  
Author(s):  
W. A. Schlup
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Noise Temperature ◽  
Transport Problem ◽  
Dimensional Electron ◽  
One Dimensional ◽  
High Electric Fields ◽  
The One

scholarly journals Unscreened Coulomb repulsion in the one-dimensional electron gas

1999 ◽  
Vol 60 (23) ◽  
pp. 15654-15659 ◽  
Author(s):  
G. Fano ◽  
F. Ortolani ◽  
A. Parola ◽  
L. Ziosi
Keyword(s):  
Electron Gas ◽  
Coulomb Repulsion ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Dimensional Electron Gas ◽  
The One

TEMPERATURE DEPENDENCE OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE PHASE GaN FOR DEVICE MODELING

2008 ◽  
Vol 22 (22) ◽  
pp. 3915-3922 ◽  
Author(s):  
A. R. BINESH ◽  
H. ARABSHAHI ◽  
G. R. EBRAHIMI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Dominant Role ◽  
Electron Velocity ◽  
Differential Conductance ◽  
Device Modeling ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Electron Transport Properties ◽  
High Electric Fields

An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in GaN is less sensitive to temperature than in other III-V semiconductors like GaAs . So GaN devices are expected to be more tolerant to self-heating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations.

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