High-temperature stages of the annealing of radiation defects in refractory BCC metals

1975 ◽  
Vol 38 (2) ◽  
pp. 101-104 ◽  
Author(s):  
M. I. Zakharova ◽  
V. A. Solov'ev ◽  
V. N. Bykov

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1350
Author(s):  
Dmitriy I. Shlimas ◽  
Artem L. Kozlovskiy ◽  
Askar Kh. Syzdykov ◽  
Daryn B. Borgekov ◽  
Maxim V. Zdorovets

The aim of this work was to study resistance to helium accumulation processes in the structure of the surface layer of lithium-containing ceramics and the subsequent destruction and embrittlement processes, depending on radiation fluence. The objects of study were Li2TiO3-type ceramics obtained by thermal sintering. The fluence dependency of changes in the structural and strength properties of ceramics was determined to be in the range from 1018 to 1022 ion/m2, which corresponded to the concentration of implanted helium from 0.01% to 0.8–1 at.%. Irradiation was carried out at a temperature of 700 °C, which made it possible to simulate the processes of radiation damage that were closest to the real conditions in the reactor core. During the studies carried out, it was found that, at irradiation fluences of 1018–1020 ion/m2, the formation of point radiation defects was equaled by the process of thermal annealing of defects, as a result of which the concentration of defects and their effect on the change in the structural and strength properties of ceramics were insignificant. An increase in the concentration of implanted helium in the structure of the surface layer to above 0.5 at.% led to the dominance of radiation damage processes over the annealing of defects and the formation of gas-filled cavities, which negatively affects the strength of ceramics.



1984 ◽  
Vol 16 (1) ◽  
pp. 28-32
Author(s):  
V. V. Krivenyuk ◽  
E. E. Zelenyuk ◽  
L. V. Shkabarov


1991 ◽  
Vol 66-69 ◽  
pp. 365-370
Author(s):  
R.P. Agarwala ◽  
D.D. Pruthi


2020 ◽  
Vol 23 ◽  
pp. 100747 ◽  
Author(s):  
M. Zibrov ◽  
T. Dürbeck ◽  
W. Egger ◽  
M. Mayer


1978 ◽  
Vol 69-70 ◽  
pp. 589-592 ◽  
Author(s):  
K. Maier ◽  
H. Metz ◽  
D. Herlach ◽  
H.-E. Schaefer


JETP Letters ◽  
2015 ◽  
Vol 101 (4) ◽  
pp. 247-250 ◽  
Author(s):  
I. S. Blokhin ◽  
S. Yu. Gavrilkin ◽  
B. P. Gorshunov ◽  
V. A. Dravin ◽  
E. S. Zhukova ◽  
...  


1998 ◽  
Vol 527 ◽  
Author(s):  
Yu.N. Osetsky ◽  
A. Serra ◽  
V. Priego ◽  
F. Gao ◽  
D.J. Bacon

ABSTRACTDiffusion of self-interstitial atoms (SIAs) has been studied in bcc-Fe and fcc-Cu using molecular dynamics and interatomic potentials of different types. The Fe potentials describe SIA configurations of different stability. The temperature dependence of the SIA diffusion mechanisms is qualitatively similar for both potentials. At high temperature the diffusion is three-dimensional via the <110> dumbbell mechanism. The contribution of one-dimensional mechanism via the <111> crowdion increases when temperature decreases. At low temperature (<300K) the diffusion mechanism depends on the stable configuration of the SIA.In fcc-Cu all the potentials reproduce the same stable configuration, namely the <100> dumbbell. The migration mechanism is mainly a three-dimensional random walk via this dumbbell with small contributions from the <110> crowdion at high temperature and a two-dimensional caging mechanism at low temperature.



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