High Temperature Diffusion Mechanism in bcc Metals

1991 ◽  
Vol 66-69 ◽  
pp. 365-370
Author(s):  
R.P. Agarwala ◽  
D.D. Pruthi
1998 ◽  
Vol 527 ◽  
Author(s):  
Yu.N. Osetsky ◽  
A. Serra ◽  
V. Priego ◽  
F. Gao ◽  
D.J. Bacon

ABSTRACTDiffusion of self-interstitial atoms (SIAs) has been studied in bcc-Fe and fcc-Cu using molecular dynamics and interatomic potentials of different types. The Fe potentials describe SIA configurations of different stability. The temperature dependence of the SIA diffusion mechanisms is qualitatively similar for both potentials. At high temperature the diffusion is three-dimensional via the <110> dumbbell mechanism. The contribution of one-dimensional mechanism via the <111> crowdion increases when temperature decreases. At low temperature (<300K) the diffusion mechanism depends on the stable configuration of the SIA.In fcc-Cu all the potentials reproduce the same stable configuration, namely the <100> dumbbell. The migration mechanism is mainly a three-dimensional random walk via this dumbbell with small contributions from the <110> crowdion at high temperature and a two-dimensional caging mechanism at low temperature.


1991 ◽  
Vol 75 ◽  
pp. 211-228 ◽  
Author(s):  
Winfried Petry ◽  
A. Heiming ◽  
Christian Herzig ◽  
J. Trampenau

2016 ◽  
Vol 26 (8) ◽  
pp. 2257-2262 ◽  
Author(s):  
Zhong-wei ZHANG ◽  
Qiang ZHEN ◽  
Feng ZHENG ◽  
Fei LU ◽  
Ce-wen NAN ◽  
...  

2021 ◽  
Vol 57 (7) ◽  
pp. 655-662
Author(s):  
M. K. Bakhadirkhanov ◽  
Kh. M. Iliev ◽  
M. O. Tursunov ◽  
S. B. Isamov ◽  
S. V. Koveshnikov ◽  
...  

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 1-11 ◽  
Author(s):  
Rogie I. Rodriguez ◽  
Dimeji Ibitayo ◽  
Pedro Quintero

There is a need for electromechanical devices capable of operating in high temperature environments (&gt;200°C) for a wide variety of applications. Today's wide-bandgap (WBG) semiconductor based power electronics have demonstrated a potential of operating above 400°C, however they are still limited by packaging. Among the most promising alternative is the Au-Sn eutectic solder, which have been widely used due to its excellent mechanical and thermal properties. However, the operating temperature of this metallurgical system is still limited to ∼250°C owing to its melting temperature of 280°C. Therefore, a higher temperature resistant system is much needed, but without affecting the current processing temperature of ∼325°C typically exhibited in most high temperature Pb-Free solders. This paper presents the development and characterization of a fluxless die attach soldering process based on gold enriched solid liquid inter-diffusion (SLID). A low melting point material (eutectic Au-Sn) was deposited in the face of a substrate, whereas a high melting point material, gold in this instance, was deposited in its mating substrate. Deposition of all materials was performed using a jet vapor deposition (JVD) equipment where thicknesses were controlled to achieve specific compositions in the mixture. Sandwiched coupons where isothermally processed in a vacuum reflow furnace. SEM and EDS were employed to reveal the microstructural evolution of the samples in order to study the interfacial reactions of this fluxless bonding process. Mechanical characterization of the each individual intermetallic phase was achieved by nanoindentation. Differential scanning calorimetry demonstrated the progression of the SLID process by quantifying the remaining low melting point constituent as a function of time and temperature. Post-processed samples confirmed the inter-diffusion mechanism as evidenced by the formation of sound joints that proved to be thermally stable up to ∼490°C after the completion of the SLID process.


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