The Singularity Paramagnetic Peak of Bi0.3Sb1.7Te3 with p-type Surface State

The magnetization measurement was performed in the Bi0.3Sb1.7Te3 single crystal. The magnetic susceptibility revealed a paramagnetic peak independent of the experimental temperature variation. It is speculated to be originated from the free-aligned spin texture at the Dirac point. The ARPES reveals that the Fermi level lies below the Dirac point. The Fermi wavevector extracted from the de Haas–van Alphen oscillation is consistent with the energy dispersion in the ARPES. Our experimental results support that the observed paramagnetic peak in the susceptibility curve does not originate from the free-aligned spin texture at the Dirac point.

Regulating surface state of ZnIn2S4 by gamma-ray irradiation for enhanced photocatalytic hydrogen evolution

Surface vacancy has been demonstrated to be an active site in photocatalytic hydrogen evolution reaction (HER) over sulfide and oxide. In this work, surface S vacancy was regulated by high-energy...

On Strong f-Electron Localization Effect in a Topological Kondo Insulator

We study a strong f-electron localization effect on the surface state of a generic topological Kondo insulator (TKI) system by performing a mean-field theoretic (MFT) calculation within the framework of the periodic Anderson model (PAM) using the slave boson technique. The surface metallicity, together with bulk insulation, requires this type of localization. A key distinction between surface states in a conventional insulator and a topological insulator is that, along a course joining two time-reversal invariant momenta (TRIM) in the same BZ, there will be an intersection of these surface states, an even/odd number of times, with the Fermi energy inside the spectral gap. For an even (odd) number of surface state crossings, the surface states are topologically trivial (non-trivial). The symmetry consideration and the pictorial representation of the surface band structure obtained here show an odd number of crossings, leading to the conclusion that, at least within the PAM framework, the generic system is a strong topological insulator.