Oxide ion conductivity of double doped lanthanum gallate perovskite type oxide

Ionics ◽  
1997 ◽  
Vol 3 (3-4) ◽  
pp. 209-213 ◽  
Author(s):  
T. Ishihara ◽  
H. Furutani ◽  
T. Yamada ◽  
Y. Takita
1999 ◽  
Vol 146 (5) ◽  
pp. 1643-1649 ◽  
Author(s):  
Tatsumi Ishihara ◽  
Haruyoshi Furutani ◽  
Hiroshi Arikawa ◽  
Miho Honda ◽  
Taner Akbay ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 30 (30) ◽  
pp. no-no
Author(s):  
Tatsumi Ishihara ◽  
Haruyoshi Furutani ◽  
Hiroshi Arikawa ◽  
Miho Honda ◽  
Taner Akbay ◽  
...  

1996 ◽  
Vol 86-88 ◽  
pp. 197-201 ◽  
Author(s):  
Tatsumi Ishihara ◽  
Hideaki Matsuda ◽  
Mohamad Azmi bin Bustam ◽  
Yusaku Takita

ChemInform ◽  
2010 ◽  
Vol 26 (10) ◽  
pp. no-no
Author(s):  
T. ISHIHARA ◽  
H. MATSUDA ◽  
Y. TAKITA

2003 ◽  
Vol 796 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Seiji Kanazawa ◽  
Toshikazu Ohkubo ◽  
Yukiharu Nomoto ◽  
Yusaku Takita ◽  
...  

ABSTRACTAn La1-xSrxGa1-y-zMgyCozO3-(x+y+z)/2 (LSGMCO) has attracted much attention because it can be useable as an electrolyte of a solid oxide fuel cell due to its high oxide ion conductivity. We prepared LSGMCO thin films on silica glass and LaAlO3 single crystal substrates by pulsed laser deposition and evaluated their properties. LSGMCO thin films deposited at 800°C were poly-crystal and the deposition pressure affected their surface morphologies. In the case of the LaAlO3 single crystal substrate, a c-axis oriented LSGMCO thin film was obtained. DC conductivity and complex impedance of LSGMCO thin films were measured in vacuum atmosphere to investigate the effect of the crystal orientation on the oxide ion conductivity. It was revealed that resistance at a grain boundary of films is more dominant compare with the grain interior.


1992 ◽  
Vol 53-56 ◽  
pp. 748-753 ◽  
Author(s):  
Y. Takeda ◽  
N. Imanishi ◽  
R. Kanno ◽  
T. Mizuno ◽  
H. Higuchi ◽  
...  

2005 ◽  
Vol 242-244 ◽  
pp. 159-168 ◽  
Author(s):  
Katsuyoshi Kakinuma ◽  
Hiroshi Yamamura ◽  
Tooru Atake

We have discovered a high oxide ion conductor within the perovskite-type (Ba1-x-ySrxLay)InO2.5+y/2 solid-solution system. The system was derived from brownmillerite-type Ba2In2O5, which possessed a ordered oxide ion vacancies. When we doped La3+ into the Ba site, the vacancy changed to a disordered state. The oxide ion conductivity increased with the amount of doped La3+, reaching a maximum value of 0.12 (S/cm) at 800 oC in (Ba0.3Sr0.2La0.5)InO2.75, a level exceeding that of yttria-stabilized zirconia. The oxide ion conductivity of this system was strongly dependent on the unit cell free volume, which appears to be the key parameter governing oxide ion mobility.


1998 ◽  
Vol 527 ◽  
Author(s):  
G.V.M. Kiruthika ◽  
U.V. Varadaraju

ABSTRACTOxide ion conductivity studies have been done on the Lanthanum Gallate based compounds. Yttrium substitution at the Ga site has been attempted to increase the unit cell size. Single phase was obtained for limited Y substituion i.e., La0.9Sr0.1Ga0.7Y0.1Mg0.2O3-x. It is found that the activation energy for the oxide ion conductivity has decreased for this composition. Based on the tolerance factor and B-site radius values, the migration energies were obtained for the LaGaO3 based perovskites. It is observed that migration energy has been significantly reduced upon substitution at the B-site. Absence of an enhancement in the conductivity with Yttrium substitution could be due to the vaccancy ordering inhibiting the oxide ion migration.


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