The distribution of density of gap states for phosphorus doped amorphous silicon measured by DLTS

1985 ◽  
Vol 2 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Du Yongchang ◽  
Zhang Yufeng ◽  
Yang Datong ◽  
Zhang Guanghua ◽  
Han Ruqi
Keyword(s):  
Amorphous Silicon ◽  
Gap States ◽  
Phosphorus Doped

scholarly journals Defect Frozen Phenomena in Phosphorus-Doped Hydrogenated Amorphous Silicon

1989 ◽  
Vol 97 (1127) ◽  
pp. 699-705
Author(s):  
Yukio OSAKA ◽  
Hiroyuki NASU ◽  
Chikashi AKAMATSU ◽  
Ryo HAYASHI
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Gap States in Phosphorus-Doped a-Si:H

1985 ◽  
pp. 239-253 ◽  
Author(s):  
Kazunobu Tanaka ◽  
Hideyo Okushi ◽  
Satoshi Yamasaki
Keyword(s):  
Gap States ◽  
Phosphorus Doped

Evidence for the hydrogen-glass model of metastability annealing in phosphorus-doped amorphous silicon

1993 ◽  
Vol 48 (23) ◽  
pp. 17114-17120 ◽  
Author(s):  
Howard M. Branz ◽  
Eugene Iwaniczko
Keyword(s):  
Amorphous Silicon ◽  
Glass Model ◽  
Phosphorus Doped

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

Structural Relaxation and Structural Memory at Amorphous Silicon Dangling Bonds

1994 ◽  
Vol 336 ◽  
Author(s):  
Howard M. Branz ◽  
Peter A. Fedders
Keyword(s):  
Amorphous Silicon ◽  
Energy Levels ◽  
Electronic Energy ◽  
Relaxation Effects ◽  
Structural Environment ◽  
Slow Relaxations ◽  
Transient Capacitance ◽  
Electronic Energy Levels ◽  
Gap States ◽  
Structural Memory

ABSTRACTWe examine the energy and time scales of configurational relaxation around the dangling bond defect, D, in hydrogenated Amorphous silicon (a-Si:H). After D captures or emits charge, its bond angle, electron energy eigenvalues and local structural environment all change. This determines the measured electronic energy levels; we use previous theoretical results and experimental data to estimate the density of gap states in the different atomic configurations of D. We also describe D relaxation effects observed in experiments, including the very slow relaxations found in recent transient capacitance measurements. To explain the unusual T-independent kinetics of transient capacitance carrier emission, we propose a model of “structural memory” in a-Si:H. After carrier capture, neighbors of D retain memory of their pre-capture configuration for seconds at 300K. The rate-limiting step to carrier emission is an effectively one-dimensional random walk of these neighbors through their configuration space and back to the pre-capture configuration. The final, activated, step of emission is very rapid. We describe analytic and monte Carlo calculations that support the structural memory Model and propose possible microscopic Mechanisms.

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