Structure, formation mechanisms and kinetics of reaction-bonded silicon nitride

1976 ◽  
Vol 11 (11) ◽  
pp. 2087-2098 ◽  
Author(s):  
Hamlin M. Jennings ◽  
Marc H. Richman
Keyword(s):  
Silicon Nitride ◽  
Structure Formation ◽  
Formation Mechanisms ◽  
Kinetics Of Reaction ◽  
Kinetics Of

Structure, formation mechanisms and kinetics of reaction-bonded silicon nitride

1976 ◽  
Vol 11 (11) ◽  
pp. 2087-2098 ◽  
Author(s):  
Hamlin M. Jennings ◽  
Marc H. Richman
Keyword(s):  
Silicon Nitride ◽  
Structure Formation ◽  
Formation Mechanisms ◽  
Kinetics Of Reaction ◽  
Kinetics Of

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Kinetics of reaction between plutonium(III) and chlorine in chloride solutions

1962 ◽  
Vol 24 (12) ◽  
pp. 1617-1621 ◽  
Author(s):  
A.S. Ghosh Mazumdar ◽  
K.P.R. Pisharody ◽  
R.N. Singh
Keyword(s):  
Chloride Solutions ◽  
Kinetics Of Reaction ◽  
Kinetics Of
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