Влияние наличия достаточно высокой концентрации фосфора на концентрационное распределение галлия в кремнии

It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.

Defocused travelling fringes in a scanning triple-Laue X-ray interferometry setup

The measurement of the silicon lattice parameter by a separate-crystal triple-Laue X-ray interferometer is a key step for the realization of the kilogram by counting atoms. Since the measurement accuracy is approaching nine significant digits, a reliable model of the interferometer operation is required to quantify or exclude systematic errors. This paper investigates both analytically and experimentally the effect of the defocus (the difference between the splitter-to-mirror and analyser-to-mirror distances) on the phase of the interference fringes and the measurement of the lattice parameter.

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic packing structure, local stress evolution and mechanical properties of a perfect lattice and silicon crystal with a single vacancy defect on heating. In addition, their influences on the change in Young’s modulus are also analyzed. The atomic simulations show that in the lower temperature range, the existence of vacancy defects reduces the Young’s modulus of the silicon lattice. With the increase in temperature, the local stress distribution of the atoms in the lattice changes due to the migration of the vacancy. At high temperatures, the Young’s modulus of the silicon lattice changes in anisotropic patterns. For the lattice with the vacancy, when the temperature is higher than 1500 K, the number and degree of distortion in the lattice increase significantly, the obvious single vacancy and its adjacent atoms contracting inward structure disappears and the defects in the lattice present complex patterns. By applying uniaxial tensile force, it can be found that the temperature has a significant effect on the elasticity–plasticity behaviors of the Si lattice with the vacancy.

The Measurement of the Silicon Lattice Parameter and the Count of Atoms to Realise the Kilogram

X-ray interferometry established a link between atomic and macroscopic realisations of the metre. The possibility of measuring the silicon lattice parameter in terms of optical wavelengths opened the way to count atoms, to determine the Avogadro constant with unprecedented accuracy, and, nowadays, to realise the kilogram from the Planck constant. Also, it is a powerful tool in phase-contrast imaging by X-rays and, combined with optical interferometry, in linear and angular metrology with capabilities at the atomic scale. This review tells the history of the development of this fascinating technology at the Istituto Nazionale di Ricerca Metrologica in the last forty years. Eventually, it highlights its contribution to the redefinition of the International System of Units (SI).

Perspective Material for Photoenergetics on the Basis of Silicon with Binary Elementary Cells

The paper proposes a scientifically-grounded, principally-new approach to managing the fundamental parameters of the basic material of electronic engineering as like silicon. The essence of the proposed approach is the formation of binary elementary cells in the silicon lattice involving elements III (B, Al, Ga, Zn) and V (P, As, Sb) groups in the form of Si2GaAs, Si2GaSb, etc. Taking electrical and chemical parameters of these impurity atoms into account, as well as their diffusion parameters in Si, the formation is determined by the most suitable pairs of atoms of groups III and V that allow obtaining silicon with the necessary composition and structure of binary elementary cells, as well as their more complex associations, up to the formation of nanocrystals of semiconductor connections AIIIBV. It is shown that by controlling the composition, structure and concentration of binary elementary cells, it is possible to significantly expand the spectral sensitivity of silicon, both in the IR and hλ > Eg directions. The formation of nanoclusters of AIIIBV semiconductor compounds in the silicon lattice significantly changes the emissivity of the material. It is established that the successive diffusion of elements of groups III and V in silicon and additional low-temperature annealing under certain thermodynamic conditions make it possible to ensure the maximum participation of the impurity atoms introduced in the formation of binary elementary cells. Silicon with binary elementary cells involving atoms of groups III and V is a new class of semiconductor material with unique functionality for modern optoelectronics and photoenergetics.