Transition metal impurities in wide gap materials: are the electronic properties well described through the ligand field theory?

2007 ◽  
Vol 118 (3) ◽  
pp. 665-671 ◽  
Author(s):  
M. Moreno ◽  
J. M. García-Lastra ◽  
M. T. Barriuso ◽  
J. A. Aramburu
Keyword(s):  
Field Theory ◽  
Transition Metal ◽  
Electronic Properties ◽  
Ligand Field ◽  
Ligand Field Theory ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Wide Gap

Nanoscale magnetism and novel electronic properties of a bilayer bismuth(111) film with vacancies and chemical doping

2016 ◽  
Vol 18 (30) ◽  
pp. 20550-20561 ◽  
Author(s):  
M. P. K. Sahoo ◽  
Yajun Zhang ◽  
Jie Wang
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Chemical Doping ◽  
Metal Impurities ◽  
Transition Metal Impurities

A single Bi(111) bilayer with defects and transition metal impurities.

Transition metal impurities and band offsets in wide gap II–VI semiconductors: Zn1−xMnxSe(Ni) compounds

1994 ◽  
Vol 91 (4) ◽  
pp. 279-282 ◽  
Author(s):  
V.R. Galakhov ◽  
T.P. Surkova ◽  
V.I. Sokolov ◽  
E.Z. Kurmaev ◽  
Chr. Zubrägel ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Offsets ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Wide Gap

Ligand Field Theory and the Stability of Transition Metal Compounds

1956 ◽  
Vol 24 (6) ◽  
pp. 1269-1269 ◽  
Author(s):  
Philip George ◽  
D. S. McClure ◽  
J. S. Griffith ◽  
L. E. Orgel
Keyword(s):  
Field Theory ◽  
Transition Metal ◽  
Transition Metal Compounds ◽  
Ligand Field ◽  
Metal Compounds ◽  
Ligand Field Theory ◽  
The Stability
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