Elastic and piezoelectric fields around a quantum wire of zincblende heterostructures with interface elasticity effect

This paper presents an analytical solution for the Eshelby problem of polygonal inhomogeneity in an anisotropic piezoelectric plane. By virtue of the equivalent body-force concept of eigenstrain, the induced elastic and piezoelectric fields in the corresponding inclusion are first expressed in terms of the line integral along its boundary with the integrand being the Green’s functions, which is carried out analytically. The Eshelby inhomogeneity relation for the elliptical shape is then extended to the polygonal inhomogeneity, with the final induced field involving only elementary functions with small steps of iteration. Numerical solutions are compared to the results obtained from other methods, which verified the accuracy of the proposed method. Finally, the solution is applied to a triangular and a rectangular quantum wire made of InAs within the semiconductor GaAs full-plane substrate.

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Elastic and piezoelectric fields in quantum wire semiconductor structures – A boundary integral equation analysis

physica status solidi (b) ◽

10.1002/pssb.200642513 ◽

2007 ◽

Vol 244 (6) ◽

pp. 1925-1939 ◽

Cited By ~ 7

Author(s):

E. Pan ◽

J. D. Albrecht ◽

Y. Zhang

Keyword(s):

Integral Equation ◽

Boundary Integral Equation ◽

Quantum Wire ◽

Boundary Integral ◽

Semiconductor Structures ◽

Equation Analysis ◽

Piezoelectric Fields

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Strain and piezoelectric fields in embedded quantum wire arrays

Superlattices and Microstructures ◽

10.1016/j.spmi.2006.06.002 ◽

2006 ◽

Vol 40 (3) ◽

pp. 125-136 ◽

Cited By ~ 3

Author(s):

F. Han ◽

E. Pan ◽

J.D. Albrecht

Keyword(s):

Quantum Wire ◽

Wire Arrays ◽

Piezoelectric Fields

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Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138592 ◽

1995 ◽

Vol 53 ◽

pp. 444-445

Author(s):

S. Hillyard ◽

Y.-P. Chen ◽

J.D. Reed ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

Electron Diffraction ◽

Semiconductor Lasers ◽

Quantum Wire ◽

Quantum Wires ◽

Convergent Beam Electron Diffraction ◽

Zero Order ◽

Beam Electron ◽

Local Lattice ◽

Device Applications ◽

Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.128.285 ◽

2008 ◽

Vol 128 (6) ◽

pp. 285-291

Author(s):

Takumi Okada ◽

Kazuhiro Komori ◽

Xue-Lun Wang ◽

Mutsuo Ogura ◽

Noriaki Tsurumachi

Keyword(s):

High Resolution ◽

Quantum Wire ◽

Coherent Control ◽

Michelson Interferometer

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Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific Reports ◽

10.1038/s41598-020-71590-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Hwan-Seop Yeo ◽

Kwanjae Lee ◽

Young Chul Sim ◽

Seoung-Hwan Park ◽

Yong-Hoon Cho

Keyword(s):

Quantum Wire ◽

Quantum Wires ◽

Geometrical Shape ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Single Quantum ◽

Group Iii ◽

Highly Efficient ◽

Group Iii Nitride ◽

Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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