Post-deposition annealing effect on the structural, morphological, and photoluminescence properties of β-Ga2O3 nanowires deposited on silicon by glancing angle deposition
2012 ◽
Vol 258
(24)
◽
pp. 9762-9769
◽
2008 ◽
Vol 25
(1)
◽
pp. 234-237
◽
Keyword(s):
Keyword(s):
2018 ◽
Vol 546
◽
pp. 33-43
◽
Keyword(s):