A surface potential-model based parameter extraction of Si–Ge-pocket n-TFET

2021 ◽  
Author(s):  
Sagarika Choudhury ◽  
Krishna Lal Baishnab ◽  
Koushik Guha ◽  
Jacopo Iannacci
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Parameter Extraction ◽  
Model Based

Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

2008 ◽  
Vol 55 (3) ◽  
pp. 789-795 ◽  
Author(s):  
Pradeep Agarwal ◽  
Govind Saraswat ◽  
M. Jagadesh Kumar
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Depletion Region ◽  
Compact Surface ◽  
Soi Mosfet

scholarly journals Modelos alométricos na determinação da área foliar de Bauhinia monandra Kurz

2016 ◽  
Vol 7 (3) ◽  
pp. 415
Author(s):  
Edilson Romais Schmildt ◽  
Omar Schmildt ◽  
Rodrigo Sobreira Alexandre ◽  
Adriano Alves Fernandes ◽  
Marcio Paulo Czepak
Keyword(s):  
Mathematical Models ◽  
Leaf Area ◽  
Linear Model ◽  
Potential Model ◽  
Leaf Surface ◽  
Linear Quadratic ◽  
Potential Models ◽  
Independent Variables ◽  
Model Based ◽  
Area Determination

The aim of this study was to evaluate the efficiency of the adjustment of mathematical models for determining Bauhinia monandra leaf area using the length and/or width of the leaves as independent variables. Leaves from plants with three years were used to the estimative of equations in linear, quadratic and potential models. The validation from the estimated leaf area as a function of the observed leaf area showed that the linear model based on the product of length and width of the largest leaf surface is the model that best fits. However, the leaf area determination can be represented by using only the length or width of the leaves with little loss of accuracy. A representation that better estimates Bauhinia monandra leaf area with easy application is the potential model in which xi represents the length of one of the symmetrical leaf lobes.

scholarly journals A Review for Compact Model of Thin-Film Transistors (TFTs)

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 599 ◽  
Author(s):  
Nianduan Lu ◽  
Wenfeng Jiang ◽  
Quantan Wu ◽  
Di Geng ◽  
Ling Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Circuit Design ◽  
Surface Potential ◽  
Radio Frequency Identification ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Theoretical Description ◽  
Compact Model ◽  
Compact Models ◽  
Identification Tags

Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

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