A time-dependent discontinuous Galerkin finite element approach in two-dimensional elastodynamic problems based on spherical Hankel element framework

2018 ◽  
Vol 229 (12) ◽  
pp. 4977-4994 ◽  
Author(s):  
E. Izadpanah ◽  
S. Shojaee ◽  
S. Hamzehei-Javaran
Keyword(s):  
Finite Element ◽  
Discontinuous Galerkin ◽  
Time Dependent ◽  
Two Dimensional ◽  
Galerkin Finite Element ◽  
Finite Element Approach ◽  
Discontinuous Galerkin Finite Element ◽  
Element Approach

scholarly journals A Fully Discrete Discontinuous Galerkin Method for Nonlinear Fractional Fokker-Planck Equation

2010 ◽  
Vol 2010 ◽  
pp. 1-26 ◽  
Author(s):  
Yunying Zheng ◽  
Changpin Li ◽  
Zhengang Zhao
Keyword(s):  
Finite Element ◽  
Discontinuous Galerkin ◽  
Planck Equation ◽  
Galerkin Finite Element ◽  
Finite Element Approach ◽  
Fully Discrete ◽  
Fokker Planck Equation ◽  
Discontinuous Galerkin Finite Element ◽  
Element Approach ◽  
Fokker Planck

The fractional Fokker-Planck equation is often used to characterize anomalous diffusion. In this paper, a fully discrete approximation for the nonlinear spatial fractional Fokker-Planck equation is given, where the discontinuous Galerkin finite element approach is utilized in time domain and the Galerkin finite element approach is utilized in spatial domain. The priori error estimate is derived in detail. Numerical examples are presented which are inline with the theoretical convergence rate.

A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL

1995 ◽  
Vol 05 (05) ◽  
pp. 659-681 ◽  
Author(s):  
XUNLEI JIANG
Keyword(s):  
Hydrodynamic Model ◽  
Transonic Flow ◽  
Numerical Experiments ◽  
Semiconductor Device ◽  
Time Dependent ◽  
Two Dimensional ◽  
Galerkin Finite Element ◽  
Finite Element Approach ◽  
Device Model ◽  
Element Approach

It is well known that the hydrodynamic model of the semiconductor device equations may have solutions with discontinuities or shocks. To solve such problems numerically, a non-symmetric streamline-upwinding/Petrov-Galerkin finite element approach is presented for the simulation of the two-dimensional, time-dependent hydrodynamic model. For the silicon diode, numerical experiments are carried out for both subsonic and transonic electron flows. Shocks of the transonic flow are captured.

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