A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL

It is well known that the hydrodynamic model of the semiconductor device equations may have solutions with discontinuities or shocks. To solve such problems numerically, a non-symmetric streamline-upwinding/Petrov-Galerkin finite element approach is presented for the simulation of the two-dimensional, time-dependent hydrodynamic model. For the silicon diode, numerical experiments are carried out for both subsonic and transonic electron flows. Shocks of the transonic flow are captured.