Characterization of reference materials: proposal for a simplification of the options listed in ISO Guide 34

2013 ◽  
Vol 18 (2) ◽  
pp. 149-152 ◽  
Author(s):  
Thomas P. J. Linsinger ◽  
Hendrik Emons
2019 ◽  
Vol 21 (6) ◽  
pp. 1034-1052 ◽  
Author(s):  
Andrea Gaedigk ◽  
Amy Turner ◽  
Robin E. Everts ◽  
Stuart A. Scott ◽  
Praful Aggarwal ◽  
...  

2021 ◽  
Vol 23 (1) ◽  
pp. 103-110
Author(s):  
Thomas W. Prior ◽  
Pinar Bayrak-Toydemir ◽  
Ty C. Lynnes ◽  
Rong Mao ◽  
James D. Metcalf ◽  
...  

2013 ◽  
Vol 846-847 ◽  
pp. 1334-1338
Author(s):  
Ting Zhang ◽  
Jia Li Gu

This paper focuses on the data processing modeling for reference materials preparation. By analyzing the data of reference materials (RMs), the process of repeatability and stability verification, uncertainty estimation, traceability of the value of a quantity and the characterization of RMs are detailed in the paper.


Author(s):  
Jean-Marc Lessinger ◽  
Pantaleimon Arzoglou ◽  
Paul Ramos ◽  
Athanase Visvikis ◽  
Stella Parashou ◽  
...  

Toxins ◽  
2015 ◽  
Vol 7 (12) ◽  
pp. 4906-4934 ◽  
Author(s):  
Sylvia Worbs ◽  
Martin Skiba ◽  
Martin Söderström ◽  
Marja-Leena Rapinoja ◽  
Reinhard Zeleny ◽  
...  
Keyword(s):  

2009 ◽  
Vol 16 (1) ◽  
pp. 1-12 ◽  
Author(s):  
Ryna B. Marinenko ◽  
Shirley Turner ◽  
David S. Simons ◽  
Savelas A. Rabb ◽  
Rolf L. Zeisler ◽  
...  

AbstractBulk silicon-germanium (SiGe) alloys and two SiGe thick films (4 and 5 μm) on Si wafers were tested with the electron probe microanalyzer (EPMA) using wavelength dispersive spectrometers (WDS) for heterogeneity and composition for use as reference materials needed by the microelectronics industry. One alloy with a nominal composition of Si0.86Ge0.14 and the two thick films with nominal compositions of Si0.90Ge0.10 and Si0.75Ge0.25 on Si, evaluated for micro- and macroheterogeneity, will make good microanalysis reference materials with an overall expanded heterogeneity uncertainty of 1.1% relative or less for Ge. The bulk Ge composition in the Si0.86Ge0.14 alloy was determined to be 30.228% mass fraction Ge with an expanded uncertainty of the mean of 0.195% mass fraction. The thick films were quantified with WDS-EPMA using both the Si0.86Ge0.14 alloy and element wafers as reference materials. The Ge concentration was determined to be 22.80% mass fraction with an expanded uncertainty of the mean of 0.12% mass fraction for the Si0.90Ge0.10 wafer and 43.66% mass fraction for the Si0.75Ge0.25 wafer with an expanded uncertainty of the mean of 0.25% mass fraction. The two thick SiGe films will be issued as National Institute of Standards and Technology Reference Materials (RM 8905).


Sign in / Sign up

Export Citation Format

Share Document