Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

2014 ◽  
Vol 13 (3) ◽  
pp. 769-777 ◽  
Author(s):  
Atindra Mohan Bandyopadhyay ◽  
Aritra Acharyya ◽  
J. P. Banerjee
Keyword(s):  
Millimeter Wave ◽  
Transit Time ◽  
Large Signal ◽  
Multiple Band ◽  
Signal Characterization

Large-signal characterization of millimeter-wave transistors using an active load-pull measurement system

2003 ◽  
Author(s):  
R. Actis ◽  
R.A. McMorran ◽  
R.A. Murphy ◽  
M.A. Hollis ◽  
R.W. Chick ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Measurement System ◽  
Large Signal ◽  
Active Load ◽  
Signal Characterization ◽  
Load Pull

Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

2013 ◽  
Vol 34 (10) ◽  
pp. 104003 ◽  
Author(s):  
Aritra Acharyya ◽  
Jit Chakraborty ◽  
Kausik Das ◽  
Subir Datta ◽  
Pritam De ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Large Signal ◽  
Signal Characterization

Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

2016 ◽  
Vol 15 (2) ◽  
pp. 646-656 ◽  
Author(s):  
Prasit Kumar Bandyopadhyay ◽  
Subhendu Chakraborty ◽  
Arindam Biswas ◽  
Aritra Acharyya ◽  
A. K. Bhattacharjee
Keyword(s):  
Millimeter Wave ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Charge Carriers ◽  
Large Signal ◽  
Impact Ionization Rate ◽  
Signal Characterization

Large-Signal Characterization of PMN-PT-Ba (90/10/3)

1997 ◽  
Author(s):  
Robert S. Janus ◽  
Mark B. Moffett ◽  
James M. Powers
Keyword(s):  
Large Signal ◽  
Signal Characterization

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Accurate large-signal characterization of LDMOSFET transistor in package

2011 ◽  
Vol 53 (3) ◽  
pp. 575-579 ◽  
Author(s):  
Mohammed Tamoum ◽  
Rachid Allam ◽  
Farid Djahli
Keyword(s):  
Large Signal ◽  
Signal Characterization
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