HIGH-SPEED RESPONSE OF GaAs/AlGaAs MULTIPLE QUANTUM WELL (MQW) ASYMMETRIC FABRY PEROT (ASFP) REFLECTION MODULATOR

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.

1991 ◽  
Vol 240 ◽  
Author(s):  
Kezhong Hu ◽  
Li Chen ◽  
A. Madhukar ◽  
P. Chen ◽  
Q. Xie ◽  
...  

We report the realization of all-optical photonic switches using strained InGaAs/GaAs multiple quantum well based inverted cavity asymmetric Fabry-Perot reflection modulators monolithically integrated with GaAs/AlGaAs based heterojunction phototransistors. The photonic switches show both bistable and non-bistable switching behavior with a contrast ratio of 12:1 and optical gain of 2 to 4 dB. The design and growth considerations for such an integrated structure are also discussed.


2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  

2006 ◽  
Author(s):  
Sylvain Maine ◽  
Delphine Marris-Morini ◽  
Laurent Vivien ◽  
Daniel Pascal ◽  
Eric Cassan ◽  
...  

1994 ◽  
Vol 7 (3) ◽  
pp. 152-159
Author(s):  
T. Fukushima ◽  
N. Matsumoto ◽  
H. Nakayama ◽  
Y. Ikegami ◽  
T. Namegaya ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document