Thermal stability of Al/nanocrystalline-Si bilayers investigated by in situ heating energy-filtered transmission electron microscopy

2011 ◽  
Vol 46 (12) ◽  
pp. 4314-4317 ◽  
Author(s):  
Z. M. Wang ◽  
L. Gu ◽  
L. P. H. Jeurgens ◽  
E. J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
In Situ Heating ◽  
Thermal Stability Of ◽  
Nanocrystalline Si

Thermal stability of laser-induced modified volumes in Si as studied by in situ and ex situ heating experiments

Microscopy ◽  
2018 ◽  
Vol 67 (2) ◽  
pp. 112-120
Author(s):  
Hiroyasu Saka ◽  
Hiroyuki Iwata ◽  
Daisuke Kawaguchi
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Laser Beam ◽  
Ex Situ ◽  
Dislocation Theory ◽  
Tail Region ◽  
Transmission Electron ◽  
Thermal Stability Of

Abstract Radiation of a permeable laser beam into Si induces considerable modification of structures. Thermal stability of the laser-induced modified volumes (LIMV’s) was studied comprehensively by means of in situ and ex situ heating experiments using transmission electron microscopy. The behavior in the tail region of a LIMV can be understood by dislocation theory, while that of a void formed at the very focus of a laser beam cannot be understood easily.

scholarly journals Thermal stability of CsPbBr3 perovskite as revealed by in situ transmission electron microscopy

APL Materials ◽  
2019 ◽  
Vol 7 (7) ◽  
pp. 071110 ◽  
Author(s):  
Chao Zhang ◽  
Joseph F. S. Fernando ◽  
Konstantin L. Firestein ◽  
Joel E. von Treifeldt ◽  
Dumindu Siriwardena ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Thermal Stability Of

Thermal Stability of Atomic Layer Deposited Zr:Al Mixed Oxide Thin Films: An in Situ Transmission Electron Microscopy Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Thermal Stability Of

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.

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