Thermal stability of laser-induced modified volumes in Si as studied by in situ and ex situ heating experiments

Microscopy ◽  
2018 ◽  
Vol 67 (2) ◽  
pp. 112-120
Author(s):  
Hiroyasu Saka ◽  
Hiroyuki Iwata ◽  
Daisuke Kawaguchi
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Laser Beam ◽  
Ex Situ ◽  
Dislocation Theory ◽  
Tail Region ◽  
Transmission Electron ◽  
Thermal Stability Of

Abstract Radiation of a permeable laser beam into Si induces considerable modification of structures. Thermal stability of the laser-induced modified volumes (LIMV’s) was studied comprehensively by means of in situ and ex situ heating experiments using transmission electron microscopy. The behavior in the tail region of a LIMV can be understood by dislocation theory, while that of a void formed at the very focus of a laser beam cannot be understood easily.

scholarly journals Thermal stability of CsPbBr3 perovskite as revealed by in situ transmission electron microscopy

APL Materials ◽  
2019 ◽  
Vol 7 (7) ◽  
pp. 071110 ◽  
Author(s):  
Chao Zhang ◽  
Joseph F. S. Fernando ◽  
Konstantin L. Firestein ◽  
Joel E. von Treifeldt ◽  
Dumindu Siriwardena ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Thermal Stability Of

Thermal Stability of Atomic Layer Deposited Zr:Al Mixed Oxide Thin Films: An in Situ Transmission Electron Microscopy Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Thermal Stability Of

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.

scholarly journals Enhanced Morphological and Thermal Stabilities of Nickel Germanide with an Ultrathin Tantalum Layer Studied by Ex Situ and In Situ Transmission Electron Microscopy

2013 ◽  
Vol 19 (S5) ◽  
pp. 114-118 ◽  
Author(s):  
Jae-Wook Lee ◽  
Hyung-Kyu Kim ◽  
Jee-Hwan Bae ◽  
Min-Ho Park ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Morphological Evolution ◽  
Ex Situ ◽  
Diffusion Reaction ◽  
Thermal Stabilities ◽  
Transmission Electron ◽  
Annealing Experiments

AbstractThe formation and morphological evolution of germanides formed in a ternary Ni/Ta-interlayer/Ge system were examined by ex situ and in situ annealing experiments. The Ni germanide film formed in the Ni/Ta-interlayer/Ge system maintained continuity up to 550°C, whereas agglomeration of the Ni germanide occurred in the Ni/Ge system without Ta-interlayer. Through microstructural and chemical analysis of the Ni/Ta-interlayer/Ge system during and after in situ annealing in a transmission electron microscope, it was confirmed that the Ta atoms remained uniformly on the top of the newly formed Ni germanide layer during the diffusion reaction. Consequently, the agglomeration of the Ni germanide film was retarded and the thermal stability was improved by the Ta incorporation.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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