Low temperature ferromagnetic behavior and temperature dependent anomalous dielectric relaxation of Zn0.90Ni0.05Mn0.05O diluted magnetic semiconductor

2018 ◽  
Vol 29 (10) ◽  
pp. 8244-8257
Author(s):  
Raju Ahmed ◽  
Anwar Siddique ◽  
A. S. M. Moslehuddin ◽  
Z. H. Mahmood ◽  
A. K. M. Akther Hossain
Keyword(s):  
Low Temperature ◽  
Dielectric Relaxation ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
Temperature Dependent ◽  
Diluted Magnetic

Carrier-Concentration-Dependent Magnetic Properties of the Diluted Magnetic Semiconductor SnMnte

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Critical Concentration ◽  
Magnetic Semiconductor ◽  
Magnetic Phases ◽  
Diluted Magnetic ◽  
Ferromagnetic Interactions

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.

Hydrothermal Synthesis of Diluted Magnetic Zn1-xMnxO Semiconductor

2013 ◽  
Vol 313-314 ◽  
pp. 184-187
Author(s):  
Wen Li Zheng ◽  
Wei Yang
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Curie Temperature ◽  
Fill Factor ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Height Ratio ◽  
Atom Concentration ◽  
X Ray ◽  
Diluted Magnetic

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 },pfaces{ 011} and–pfaces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

Low-temperature ferromagnetism in a new diluted magnetic semiconductor Bi2−x FexTe3

JETP Letters ◽  
2001 ◽  
Vol 73 (7) ◽  
pp. 352-356 ◽  
Author(s):  
V. A. Kul’bachinskii ◽  
A. Yu. Kaminskii ◽  
K. Kindo ◽  
Y. Narumi ◽  
K. Suga ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Effect of doping and sintering in structure and magnetic properties of the diluted magnetic semiconductor ZnO:Ni

Cerâmica ◽  
2018 ◽  
Vol 64 (372) ◽  
pp. 627-631
Author(s):  
A. Morais ◽  
R. A. Torquato ◽  
U. C. Silva ◽  
C. Salvador ◽  
C. Chesman
Keyword(s):  
Magnetic Properties ◽  
Band Gap ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Diluted Magnetic ◽  
Zno Semiconductor ◽  
Effect Of Doping

Abstract This work aimed to study a sintered Ni-doped ZnO dilute magnetic semiconductor synthesized by means of a combustion reaction and to evaluate the effect of doping and sintering in the band gap and magnetic properties of the material. X-ray diffraction showed the formation of the ZnO semiconductor phase and also the formation of a second-phase characterized as a solid solution of nickel-zinc oxide. The hysteresis curves showed the success in creating ferromagnetism with doping and the effect of sintering in the remanent magnetization and coercive field values, yet both systems were able to maintain its ferromagnetic behavior. The UV-vis analysis indicated the value of the band gap continued as a semiconductor material, although it has been narrowed. Scanning electron microscopy was used in a complementary way to evaluate the morphology and its effects on magnetic properties.

scholarly journals Dilute Magnetic SemiconductorCu2FeSnS4Nanocrystals with a Novel Zincblende Structure

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Xiaolu Liang ◽  
Xianhua Wei ◽  
Daocheng Pan
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Nir Absorption ◽  
Diluted Magnetic ◽  
Average Size

Diluted magnetic semiconductorCu2FeSnS4nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

Low-temperature ferromagnetism and magnetic anisotropy in the novel diluted magnetic semiconductor Sb2−xVxTe3

2002 ◽  
Vol 312-313 ◽  
pp. 820-822 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Pavel Hájek ◽  
Petr Los̆t’ák ◽  
Ctirad Uher
Keyword(s):  
Low Temperature ◽  
Magnetic Anisotropy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
The Novel ◽  
Diluted Magnetic

scholarly journals Magnetic measurements on ferromagnetic behavior in the bulk II–VI diluted magnetic semiconductor Zn1−xCrxTe

2004 ◽  
Vol 95 (11) ◽  
pp. 7178-7180 ◽  
Author(s):  
T. M. Pekarek ◽  
D. J. Arenas ◽  
B. C. Crooker ◽  
I. Miotkowski ◽  
A. K. Ramdas
Keyword(s):  
Magnetic Measurements ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
Diluted Magnetic
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