Low-temperature ferromagnetism and magnetic anisotropy in the novel diluted magnetic semiconductor Sb2−xVxTe3

2002 ◽  
Vol 312-313 ◽  
pp. 820-822 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Pavel Hájek ◽  
Petr Los̆t’ák ◽  
Ctirad Uher
Keyword(s):  
Low Temperature ◽  
Magnetic Anisotropy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
The Novel ◽  
Diluted Magnetic

Carrier-Concentration-Dependent Magnetic Properties of the Diluted Magnetic Semiconductor SnMnte

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Critical Concentration ◽  
Magnetic Semiconductor ◽  
Magnetic Phases ◽  
Diluted Magnetic ◽  
Ferromagnetic Interactions

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.

Hydrothermal Synthesis of Diluted Magnetic Zn1-xMnxO Semiconductor

2013 ◽  
Vol 313-314 ◽  
pp. 184-187
Author(s):  
Wen Li Zheng ◽  
Wei Yang
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Curie Temperature ◽  
Fill Factor ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Height Ratio ◽  
Atom Concentration ◽  
X Ray ◽  
Diluted Magnetic

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 },pfaces{ 011} and–pfaces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

Low-temperature ferromagnetism in a new diluted magnetic semiconductor Bi2−x FexTe3

JETP Letters ◽  
2001 ◽  
Vol 73 (7) ◽  
pp. 352-356 ◽  
Author(s):  
V. A. Kul’bachinskii ◽  
A. Yu. Kaminskii ◽  
K. Kindo ◽  
Y. Narumi ◽  
K. Suga ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

Novel Magnetic and Opto-Electronic Phenomena in Diluted Magnetic Semiconductor Multilayers

1989 ◽  
Vol 151 ◽  
Author(s):  
J. K. Furdyna ◽  
N. Samarth
Keyword(s):  
Thin Film ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
The Novel ◽  
New Materials ◽  
Quantum Well Structures ◽  
Exchange Effects ◽  
The Family ◽  
Diluted Magnetic ◽  
General Aspects

ABSTRACTWe begin by reviewing earlier work involving the epitaxial growth of diluted magnetic semiconductor (DMS) layers, heterostructures and superlattices. We also describe current efforts at introducing new materials – such as Cd1-xMnxSe – to the family of MBE-grown DMS alloys. We then discuss some of the unique properties of DMS materials that make the study of thin film structures attractive, with particular emphasis on two general aspects. First, we look at the new opportunities in magnetism that are provided by epitaxially grown DMS films. Second, we examine some of the novel phenomena made possible by sp-d exchange effects in the context of DMS quantum well structures.

Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As

2001 ◽  
Vol 78 (12) ◽  
pp. 1691-1693 ◽  
Author(s):  
Takashi Hayashi ◽  
Yoshiaki Hashimoto ◽  
Shingo Katsumoto ◽  
Yasuhiro Iye
Keyword(s):  
Low Temperature ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Low Temperature Annealing ◽  
Diluted Magnetic

Diluted Magnetic Zn1-XMnxO Semiconductor Synthesized by Hydrothermal Method

2012 ◽  
Vol 271-272 ◽  
pp. 26-30
Author(s):  
Wen Li Zheng ◽  
Wei Yang
Keyword(s):  
Low Temperature ◽  
Curie Temperature ◽  
Hydrothermal Method ◽  
Fill Factor ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Height Ratio ◽  
Atom Concentration ◽  
X Ray ◽  
Diluted Magnetic

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 }, p faces{ 011} and –p faces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

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