Improved optical absorption, enhanced morphological and electrochemical properties of pulsed laser deposited binary zinc and vanadium oxide thin films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

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Erratum to “Structural and electrochemical properties of vanadium oxide thin films grown by d.c. and r.f. reactive sputtering at room temperature” [Thin Solid Films 460 (2004) 41–47]

Thin Solid Films ◽

10.1016/j.tsf.2004.08.003 ◽

2005 ◽

Vol 473 (1) ◽

pp. 176

Author(s):

Y.S. Yoon ◽

J.S. Kim ◽

S.H. Choi

Keyword(s):

Thin Films ◽

Vanadium Oxide ◽

Electrochemical Properties ◽

Room Temperature ◽

Reactive Sputtering ◽

Oxide Thin Films ◽

Thin Solid Films ◽

Solid Films ◽

Vanadium Oxide Thin Films

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Phase composition and valence of pulsed laser deposited vanadium oxide thin films at different oxygen pressures

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2006.07.087 ◽

2007 ◽

Vol 201 (9-11) ◽

pp. 5344-5347 ◽

Cited By ~ 30

Author(s):

Y.L. Wang ◽

X.K. Chen ◽

M.C. Li ◽

R. Wang ◽

G. Wu ◽

...

Keyword(s):

Thin Films ◽

Phase Composition ◽

Vanadium Oxide ◽

Pulsed Laser ◽

Oxide Thin Films ◽

Vanadium Oxide Thin Films

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Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition

MRS Advances ◽

10.1557/adv.2016.311 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2737-2742 ◽

Cited By ~ 3

Author(s):

Ying Deng ◽

Anthony Pelton ◽

R. A. Mayanovic

Keyword(s):

Thin Films ◽

Vanadium Oxide ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Target Material ◽

Laser Pulses ◽

High Energy ◽

Laser Deposition ◽

Oxide Thin Films ◽

Vanadium Oxide Thin Films

ABSTRACTPulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

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