scholarly journals Temperature evolution of Trp-cage folding pathways: An analysis by dividing the probability flux field into stream tubes

2017 ◽  
Vol 43 (4) ◽  
pp. 565-583
Author(s):  
Vladimir A. Andryushchenko ◽  
Sergei F. Chekmarev
Author(s):  
Chun-Xu Du ◽  
Zhong-Xian Yuan ◽  
Xiao-Huang Hou ◽  
Feng Xin ◽  
Dong-Dong Gao ◽  
...  

2021 ◽  
Author(s):  
Joshua A. Johnson ◽  
Vasiliki Kolliopoulos ◽  
Carlos E. Castro

We demonstrate co-self-assembly of two distinct DNA origami structures with a common scaffold strand through programmable bifurcation of folding pathways.


Biology ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 656
Author(s):  
Vincent Van Deuren ◽  
Yin-Shan Yang ◽  
Karine de Guillen ◽  
Cécile Dubois ◽  
Catherine Anne Royer ◽  
...  

Multidimensional NMR intrinsically provides multiple probes that can be used for deciphering the folding pathways of proteins: NH amide and CH groups are strategically located on the backbone of the protein, while CH3 groups, on the side-chain of methylated residues, are involved in important stabilizing interactions in the hydrophobic core. Combined with high hydrostatic pressure, these observables provide a powerful tool to explore the conformational landscapes of proteins. In the present study, we made a comparative assessment of the NH, CH, and CH3 groups for analyzing the unfolding pathway of ∆+PHS Staphylococcal Nuclease. These probes yield a similar description of the folding pathway, with virtually identical thermodynamic parameters for the unfolding reaction, despite some notable differences. Thus, if partial unfolding begins at identical pressure for these observables (especially in the case of backbone probes) and concerns similar regions of the molecule, the residues involved in contact losses are not necessarily the same. In addition, an unexpected slight shift toward higher pressure was observed in the sequence of the scenario of unfolding with CH when compared to amide groups.


2021 ◽  
Vol 143 (3) ◽  
pp. 1447-1457
Author(s):  
Sandhya Bhatia ◽  
Guruswamy Krishnamoorthy ◽  
Jayant B. Udgaonkar

2002 ◽  
Vol 74 (0) ◽  
pp. s892-s894 ◽  
Author(s):  
M. Gutmann ◽  
E.S. Bo?in ◽  
S.J.L. Billinge ◽  
N.A. Babushkina ◽  
L.M. Belova ◽  
...  

2017 ◽  
Vol 897 ◽  
pp. 595-598
Author(s):  
Diane Perle Sadik ◽  
Jang Kwon Lim ◽  
Juan Colmenares ◽  
Mietek Bakowski ◽  
Hans Peter Nee

The temperature evolution during a short-circuit in the die of three different Silicon Carbide1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructedstructure of commercially available devices. The location of the hottest point in the device iscompared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in orderto protect the device after a fault.


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