Chemical Solution Growth and Oxygen Diffusion Behavior of Doped CeO2−δ Buffers in Coated Conductors

2015 ◽  
Vol 29 (2) ◽  
pp. 315-321
Author(s):  
H. Wang ◽  
L. Y. Cao ◽  
Y. Wang ◽  
L. H. Jin ◽  
J. Y. Liu ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Coated Conductors ◽  
Solution Growth ◽  
Chemical Solution ◽  
Diffusion Behavior ◽  
Doped Ceo2

Chemical solution growth of superconductors: a new path towards high critical current coated conductors

2004 ◽  
Vol 408-410 ◽  
pp. 913-914 ◽  
Author(s):  
X. Obradors ◽  
T. Puig ◽  
A. Pomar ◽  
N. Mestres ◽  
F. Sandiumenge ◽  
...  
Keyword(s):  
Critical Current ◽  
Coated Conductors ◽  
Solution Growth ◽  
Chemical Solution

Study on CexLa1-xO2 Buffer Layer used in Coated Conductors by Chemical Solution Method

2009 ◽  
Vol 24 (6) ◽  
pp. 1201-1204 ◽  
Author(s):  
Yue ZHAO ◽  
Hong-Li SUO ◽  
Jean-Claude GRIVEL ◽  
Shuai YE ◽  
Min LIU ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Solution Method ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Chemical Solution Method

Interlayer structure in YBCO-coated conductors prepared by chemical solution deposition

2013 ◽  
Vol 26 (7) ◽  
pp. 075016 ◽  
Author(s):  
Leopoldo Molina-Luna ◽  
Ricardo Egoavil ◽  
Stuart Turner ◽  
Thomas Thersleff ◽  
Jo Verbeeck ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Interlayer Structure ◽  
Ybco Coated Conductors

Deposition of rare earth tantalate buffers on textured Ni-W substrates for YBCO coated conductor using chemical solution deposition approach

2006 ◽  
Vol 21 (3) ◽  
pp. 767-773 ◽  
Author(s):  
M.S. Bhuiyan ◽  
M. Paranthaman ◽  
A. Goyal ◽  
L. Heatherly ◽  
D.B. Beach
Keyword(s):  
Rare Earth ◽  
Chemical Solution Deposition ◽  
Precursor Solution ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ybco Coated Conductors

Epitaxial films of rare-earth (RE = La, Ce, Eu, and Gd) tantalates, RE3TaO7 with pyrochlore structures were grown on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates using chemical solution deposition (CSD) process. Precursor solution of 0.3∼0.4 M concentration of total cations were spin coated on to short samples of Ni-W substrates and the films were crystallized at 1050∼1100 °C in a gas mixture of Ar- 4% H2 for 15 to 60 min. X-ray studies show that the films of pyrochlore RE tantalate films are highly textured with cube-on-cube epitaxy. Improved texture was observed in case of lanthanum tantalate (La3TaO7) film grown on Ni-W substrates. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) investigations of RE3TaO7 films reveal a fairly dense and smooth microstructure without cracks and porosity. The rare-earth tantalate layers may be potentially used as buffer layers for YBa2Cu3O7-δ (YBCO) coated conductors.

Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal

2009 ◽  
Vol 421-422 ◽  
pp. 197-200 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Kenji Matsumoto ◽  
Masashi Uematsu ◽  
Hajime Haneda ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Oxygen Diffusion ◽  
Depth Profiling ◽  
Implantation Technique ◽  
Constant Concentration ◽  
Concentration Region ◽  
Diffusion Behavior ◽  
Oxygen Interstitial ◽  
Zno Single Crystal ◽  
Diffusion Behaviors

Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration region and a steep tail, which was also found in profiles of other donors such as Ga and In. Detailed analysis of the profiles revealed that the diffusivity of Al was proportional to the square of Al concentration and its intrinsic diffusivity was much smaller than previously reported values. Oxygen diffusion experiments were also performed and the implantation of Al ions enhanced the oxygen diffusion coefficients by about 20 times. This result indicates that oxygen interstitial diffusion occurs in n-type ZnO.

Iridium: An Oxygen Diffusion Barrier and a Conductive Seed Layer for RABiTS-Based Coated Conductors

2005 ◽  
Vol 15 (2) ◽  
pp. 2977-2980 ◽  
Author(s):  
T. Aytug ◽  
M. Paranthaman ◽  
H.Y. Zhai ◽  
K.J. Leonard ◽  
A.A. Gapud ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Seed Layer ◽  
Coated Conductors

scholarly journals Chemical Solution Deposition of LaMnO$_{3}$ Buffer Layers for Coated Conductors

2007 ◽  
Vol 17 (4) ◽  
pp. 3880-3885 ◽  
Author(s):  
Xuebin Zhu ◽  
Hechang Lei ◽  
Dongqi Shi ◽  
Li Zhang ◽  
Lin Wang ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition

Chemical solution deposition of YBa2Cu3O7−x coated conductors

2006 ◽  
Vol 10 (5-6) ◽  
pp. 205-216 ◽  
Author(s):  
K. Knoth ◽  
S. Engel ◽  
C. Apetrii ◽  
M. Falter ◽  
B. Schlobach ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Solution Deposition
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