Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal

2009 ◽  
Vol 421-422 ◽  
pp. 197-200 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Kenji Matsumoto ◽  
Masashi Uematsu ◽  
Hajime Haneda ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Oxygen Diffusion ◽  
Depth Profiling ◽  
Implantation Technique ◽  
Constant Concentration ◽  
Concentration Region ◽  
Diffusion Behavior ◽  
Oxygen Interstitial ◽  
Zno Single Crystal ◽  
Diffusion Behaviors

Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration region and a steep tail, which was also found in profiles of other donors such as Ga and In. Detailed analysis of the profiles revealed that the diffusivity of Al was proportional to the square of Al concentration and its intrinsic diffusivity was much smaller than previously reported values. Oxygen diffusion experiments were also performed and the implantation of Al ions enhanced the oxygen diffusion coefficients by about 20 times. This result indicates that oxygen interstitial diffusion occurs in n-type ZnO.

Surface Oxygen Exchange Kinetics and Oxygen Diffusion Rates in Ysz Single Crystals

1998 ◽  
Vol 548 ◽  
Author(s):  
N.I. Joos ◽  
P.A.W. van der Heide ◽  
J.R. Liu ◽  
R. Christoffersen ◽  
W.K. Chu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Exchange Rates ◽  
Diffusion Coefficients ◽  
Oxygen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Bulk Diffusion ◽  
Nuclear Reaction Analysis ◽  
Surface Exchange ◽  
Bulk Oxygen

ABSTRACTIsotope exchange with C18O2 followed by depth profiling analysis was used to study surface exchange and bulk diffusion of oxygen in single crystal ((100) surface orientation) yttria-stabilized zirconia (YSZ) in the temperature range 250°C - 350°C. The depth profiles, which were obtained using 18O(ρ,α)15N nuclear reaction analysis (NRA) and secondary ion mass spectrometry (SIMS), reveal both the bulk oxygen diffusion coefficients (D) and surface exchange coefficients (k). Bulk oxygen diffusion coefficients are consistent with an extrapolation to lower temperature of previously published results with an activation energy of 114 kJ/mol (1.2 eV). The surface exchange rates, however, depend strongly on the gas exchange species. Much higher exchange rates are observed with C18O2 than with 18O2 (over four orders of magnitude when compared to an extrapolation to lower temperatures of previously published results) with a measured activation energy of 152 kJ/mol (1.6 eV). This faster surface exchange rate enabled measurable 18O tracer profiles to be generated at lower temperatures than previously reported, further contributing to the understanding of YSZ material properties and bringing to light a possible order/disorder transition similar to that previously observed at 650°C.

Activation barriers for oxygen diffusion in polystyrene and polycarbonate glasses: effects of codissolved argon, helium, and nitrogen

1995 ◽  
Vol 73 (11) ◽  
pp. 1831-1840 ◽  
Author(s):  
Bojie Wang ◽  
Peter R. Ogilby
Keyword(s):  
Diffusion Coefficient ◽  
Polymer Matrix ◽  
Diffusion Coefficients ◽  
Oxygen Diffusion ◽  
Arrhenius Plot ◽  
Activation Barrier ◽  
Spectroscopic Technique ◽  
Activation Barriers ◽  
Data Yield ◽  
Diffusion Activation

A recently developed spectroscopic technique was used to determine oxygen diffusion coefficients as a function of temperature for polystyrene and polycarbonate films. Data were recorded at total pressures <300 Torr over the temperature range 5–45 °C under conditions in which argon, helium, and nitrogen, respectively, were copenetrants. In all cases, the presence of the additional gas caused an increase in the oxygen diffusion coefficient. Arrhenius plots of the data yield (a) a diffusion activation barrier, Eact, and (b) a diffusion coefficient, D0, that represents the condition of "barrier-free" gas transport for the temperature domain over which the Arrhenius plot is linear. For all cases examined in both polystyrene and polycarbonate, D0 increased with an increase in the partial pressure of added gas. In polystyrene, the presence of an additional gas did not change Eact. In polycarbonate, Eact obtained in the presence of helium and argon likewise did not differ from that obtained in the absence of the copenetrant. When nitrogen was the added gas, however, a larger value of Eact was obtained. This latter observation is interpreted to reflect the plasticization of polycarbonate by nitrogen. Eact and D0 data are discussed within the context of a model that distinguishes between dynamic and static elements of free volume in the polymer matrix. Keywords: oxygen diffusion, polystyrene, polycarbonate, activation barrier.

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

SIMS depth profiling of N and In in a ZnO single crystal

2003 ◽  
Vol 203-204 ◽  
pp. 359-362 ◽  
Author(s):  
Dae-Chul Park ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Shunichi Hishita ◽  
Hajime Haneda
Keyword(s):  
Single Crystal ◽  
Depth Profiling ◽  
Zno Single Crystal ◽  
Sims Depth Profiling

Determination of Hydrogen Diffusion Coefficients in F82H by Hydrogen Depth Profiling with a Tritium Imaging Plate Technique

2015 ◽  
Vol 67 (2) ◽  
pp. 379-381 ◽  
Author(s):  
M. Higaki ◽  
T. Otsuka ◽  
K. Tokunaga ◽  
K. Hashizume ◽  
K. Ezato ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Hydrogen Diffusion ◽  
Depth Profiling ◽  
Imaging Plate ◽  
Plate Technique

Oxygen diffusion in amorphous and partially crystalline gallium oxide

2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Oxygen Diffusion ◽  
Gallium Oxide ◽  
Tracer Diffusion ◽  
Tof Sims ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.

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