The effect of carrier gas flow rate on the growth of MoS2 nanoflakes prepared by thermal chemical vapor deposition

The effect of carrier gas flow rate on the morphologies of In2O3 nanostructures was studied in a horizontal tube furnace via chemical vapor deposition method. Under low carrier gas flow rate, there appeared randomly oriented nanorods on the substrate, while the high carrier gas flow rate resulted in the nanocubes growth. The insufficient understanding of the role of the argon carrier gas flow rate motivated us to systematically research the transportation of the grown species during the growth processes and its effect on the nanostructure growth. COMSOL simulations were applied to evaluate the distribution of the growth species in the reactor versus the carrier gas flow rate, based on the geometry of our chemical vapor deposition system and a variety of actual growth conditions. The vapor species partial along with different carrier gas rate could cause the different super saturation condition, which is mainly to be responsible for the structural transformation. A combined VLS–VS mechanism was proposed to describe the growth of the Au-catalyzed In2O3 nanorods, while the nanocubes were governed by catalyst free VS growth mechanism.

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Effect of the Carrier Gas Flow Rate on the Microstructure Evolution and the Generation of the Charged Nanoparticles During Silicon Chemical Vapor Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7669 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7127-7130 ◽

Cited By ~ 3

Author(s):

Woong-Kyu Youn ◽

Chan-Soo Kim ◽

Nong-Moon Hwang

Keyword(s):

Chemical Vapor Deposition ◽

Flow Rate ◽

Microstructure Evolution ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Gas Flow Rate ◽

Carrier Gas ◽

Charged Nanoparticles ◽

Carrier Gas Flow

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Structural and Optical Properties of ZnO Nanotetrapods Deposited by Thermal Chemical Vapor Deposition with Different Gas Flow Rate

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.456 ◽

2015 ◽

Vol 1109 ◽

pp. 456-460

Author(s):

Najwa Ezira Ahmed Azhar ◽

Shafinaz Sobihana Shariffudin ◽

Aimi Bazilah Rosli ◽

A.K.S. Shafura ◽

Mohamad Rusop

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Flow Rate ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Gas Flow Rate ◽

Structural And Optical Properties ◽

Thermal Chemical Vapor Deposition ◽

Yellow Orange

ZnO nanotetrapod with different oxygen flow rate was prepared by thermal chemical vapor deposition. We have successfully deposited ZnO nanotetrapod on synthesis Zn powder using double furnace with argon (Ar) and oxygen (O2) gas as source material. In this study, we report the effect of different gas flow rate (5 sccm to 15 sccm) on structural and optical properties of the ZnO nanotetrapod. The morphology of ZnO nanotetrapods were analyzed by field emission scanning electron microscope (FE-SEM). It exhibits the length of the nanotetrapods arm decrease with increased of flow rate and diameter of nanotetrapod in range 30 nm to 90 nm. The optical properties were determined through XRD and photoluminescence with 2θ (30o to 80o) and wavelength 350 nm to 620 nm respectively. PL spectra show that the UV emission centred at 380 nm while yellow-orange emission centred at 540 nm.

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Effects of Acetylene on Deposition Rate of Stainless Steels Using Thermal Chemical Vapor Deposition

International Journal of Engineering Research in Africa ◽

10.4028/www.scientific.net/jera.23.7 ◽

2016 ◽

Vol 23 ◽

pp. 7-12 ◽

Cited By ~ 1

Author(s):

M. Mostafizur Rahman ◽

Shaon Talukdar ◽

Mohammad Asaduzzaman Chowdhury ◽

Rasel Khan ◽

Abdullah A. Masum ◽

...

Keyword(s):

Stainless Steel ◽

Chemical Vapor Deposition ◽

Deposition Rate ◽

Flow Rate ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Film Deposition ◽

Gas Flow Rate ◽

Thermal Chemical Vapor Deposition

A hot filament thermal chemical vapor deposition (CVD) reactor was used to deposit solid thin films on stainless steel 316 (SS 316) and stainless steel 201 (SS 201) substrates at different flow rates of acetylene (C2H2) gas. The variation of thin film deposition rate with the variation of gas flow rate has been investigated experimentally. During experiments are conducted under gas flow rate (1-5) lit/min gas flow rate, duration of deposition (10-60 min), pressure (0.2-1 bar), average surface roughness (0.3-1.05) µm and temperature 800 °C considered. Experimental results show that deposition rate on SS 316 and SS 201 increases with the increase in gas flow rate. The deposition rate also shows increasing trend with pressure and duration of deposition. Under the above mentioned experimental conditions deposition is found to be maximum of SS-316 compared to SS-201. In relation to roughness the maximum deposition is found at 0.5 microns but comparing the both materials -316 and-201 highest of deposition rate is obtained from SS-316.

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Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽

10.1557/adv.2016.666 ◽

2016 ◽

Vol 2 (29) ◽

pp. 1533-1538 ◽

Cited By ~ 2

Author(s):

S. Ishihara ◽

Y. Hibino ◽

N. Sawamoto ◽

T. Ohashi ◽

K. Matsuura ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Flow Rate ◽

Vapor Deposition ◽

Gas Flow ◽

Film Formation ◽

Chemical Vapor ◽

Gas Flow Rate ◽

Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

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Preparation of Si3N4 by Chemical Vapor Deposition (Effects of Raw Gas Flow Rate)

Journal of the Japan Institute of Metals and Materials ◽

10.2320/jinstmet1952.41.4_358 ◽

1977 ◽

Vol 41 (4) ◽

pp. 358-367 ◽

Cited By ~ 9

Author(s):

Toshio Hirai ◽

Koichi Niihara ◽

Takashi Goto

Keyword(s):

Chemical Vapor Deposition ◽

Flow Rate ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Gas Flow Rate

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Growth Promotion and Etching of Carbon Nanotubes by Carbon Dioxide in Chemical Vapor Deposition using Methane Gas

MRS Proceedings ◽

10.1557/proc-1057-ii05-15 ◽

2007 ◽

Vol 1057 ◽

Cited By ~ 1

Author(s):

Yoshiyuki Suda ◽

Junichi Takayama ◽

Takeshi Saito ◽

Atsushi Okita ◽

Junji Nakamura ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Flow Rate ◽

Vapor Deposition ◽

Gas Flow ◽

Growth Promotion ◽

Chemical Vapor ◽

Gas Flow Rate ◽

Preferential Growth ◽

Ar Gas ◽

Walled Cnts

ABSTRACTWe report the effect of CO2 addition to CO4 gas on carbon nanotube (CNT) growth by chemical vapor deposition. CO2 gas was introduced during the growth of CNTs on Fe0.05Mo0.025MgO0.925 and Ni0.05Mo0.025MgO0.925 catalysts by CO4 gas at a temperature of 800–850°C, and its concentration in a fraction of the gas flow rate was varied from 5×10−3 to 50%. In the experimental condition of the preferential growth of multi-walled CNTs, the carbon yield and the G/D ratio in the Raman spectra of the CNTs grown in 10%-CO2/CO4 were slightly higher than that grown in CO4 only. However, CNTs hardly grew when the CO2 concentration was more than 10%. We then prepared CO2 gas diluted with Ar gas (CO2/Ar) and varied its flow rate between 0 and 10 sccm. As the CO2/Ar gas flow rate was increased, the number of RBM peaks decreased even though the G/D ratio gradually decreased. The decrease in the RBM intensities of CNTs on the FeMoMgO catalyst was more significant than that of NiMoMgO.

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Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19416 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4470-4476

Author(s):

Yoonsoo Park ◽

Hyuna Lim ◽

Namwuk Baek ◽

Seung Hun Park ◽

Sungwoo Lee ◽

...

Keyword(s):

Dielectric Constant ◽

Flow Rate ◽

Chemical Structure ◽

Gas Flow ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Gas Flow Rate ◽

Carrier Gas ◽

Low Dielectric ◽

Carrier Gas Flow

In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.), helium carrier gas flow rate was used to modulate the properties of the low-dielectric-constant SiCOH films. Octamethylcyclotetrasiloxane (OMCTS) precursor and helium were injected into the process chamber of PECVD. And then SiCOH films were deposited varying helium carrier gas flow rate. As helium carrier gas flow rate increased from 1500 to 5000 sccm, refractive indices were increased from 1.389 to 1.428 with enhancement of mechanical strength, i.e., increased hardness and elastic modulus from 1.7 and 9.1 GPa to 3.3 and 19.8 GPa, respectively. However, the relative dielectric constant (k) value was slightly increased from 2.72 to 2.97. Through analysis of Fourier transform infrared (FTIR) spectroscopy, the effects of the helium carrier gas flow rate on chemical structure, were investigated. It was thought that the increase in helium carrier gas flow rate could affect the density with changes of chemical structure and composition. In conclusion, regulation of helium carrier gas flow rate can effectively modulate k values and mechanical strength, which is needed for IMD material in semiconductor fabrication possess.

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