Ultrahigh-quantum-efficiency and high-bandwidth nanowire array UTC-PDs working at 1064 nm

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Hanxiao Shao ◽  
Bo Cheng ◽  
Yun Xu ◽  
Guofeng Song
Keyword(s):  
Quantum Efficiency ◽  
Nanowire Array ◽  
High Bandwidth

Resonance absorption and quantum efficiency of graded composition AlxGa1-xN nanowire array cathode

2021 ◽  
Vol 223 ◽  
pp. 110981
Author(s):  
Lei Liu ◽  
Feifei Lu ◽  
Jian Tian ◽  
Xingyue Zhangyang
Keyword(s):  
Quantum Efficiency ◽  
Nanowire Array ◽  
Resonance Absorption

scholarly journals Frequency Response Simulation Analysis of Waveguide Photodetectors

2017 ◽  
Vol 9 (4) ◽  
pp. 1
Author(s):  
Joao Paulo N. Torres ◽  
Jorge Pereira
Keyword(s):  
Numerical Analysis ◽  
Frequency Response ◽  
Quantum Efficiency ◽  
Simulation Analysis ◽  
Longitudinal Direction ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Absorption Of Light ◽  
High Bandwidth ◽  
Current Flows

In waveguide photodetectors the bandwidth and the quantum efficiency may be specified almost independently because the absorption of light is in the longitudinal direction whereas the current flows in the transversal direction. Then, these devices may combine high bandwidth with high quantum efficiency. In this paper a detailed numerical analysis of the frequency response of waveguide photodetectors is presented. The calculations show that the capacitive effects limit the bandwidth but that by an appropriate choice of a series inductance the maximum bandwidth almost doubles.

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

High-Bandwidth Laser-Absorption Measurements of Temperature, Pressure, CO, and H2O in the Annulus of a Rotating Detonation Rocket Engine

2021 ◽  
Author(s):  
Garrett C. Mathews ◽  
Matthew Blaisdell ◽  
Aaron I. Lemcherfi ◽  
Carson D. Slabaugh ◽  
Christopher S. Goldenstein
Keyword(s):  
Rocket Engine ◽  
Laser Absorption ◽  
High Bandwidth ◽  
Rotating Detonation ◽  
Absorption Measurements
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