Increase of photoluminescence quantum efficiency of porous silicon layers by optimization of anodization parameters

Author(s):  
Д. Ф. Тімохов
1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


1996 ◽  
Vol 40 (1) ◽  
pp. 54-57 ◽  
Author(s):  
V.A. Skryshevsky ◽  
A. Laugier ◽  
V.I. Strikha ◽  
V.A. Vikulov

1995 ◽  
Vol 31 (15) ◽  
pp. 1288-1289 ◽  
Author(s):  
A. Loni ◽  
L.T. Canham ◽  
A.J. Simons ◽  
T.I. Cox ◽  
P.D.J. Calcott

1994 ◽  
Author(s):  
Jim P. Zheng ◽  
Kaili L. Jiao ◽  
Wayne A. Anderson ◽  
HoiSing Kwok

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