Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).

Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes

Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.

Optical multi-channel interrogation instrument for bacterial colony characterization

A single instrument that includes multiple optical channels was developed to simultaneously measure various optical and associated biophysical characteristics of a bacterial colony. The multi-channel device can provide five distinct optical features without the need to transfer the sample to multiple locations or instruments. The available measurement channels are bright-field light microscopy, 3-D colony-morphology map, 2-D spatial optical-density distribution, spectral forward-scattering pattern, and spectral optical density. The series of multiple morphological interrogations is beneficial in understanding the bio-optical features of a bacterial colony and the correlations among them, resulting in an enhanced power of phenotypic bacterial discrimination. To enable a one-shot interrogation, a confocal laser scanning module was built as an add-on to an upright microscope. Three different-wavelength diode lasers were used for the spectral analysis, and high-speed pin photodiodes and CMOS sensors were utilized as detectors to measure the spectral OD and light-scatter pattern. The proposed instrument and algorithms were evaluated with four bacterial genera, Escherichia coli, Listeria innocua, Salmonella Typhimurium, and Staphylococcus aureus; their resulting data provided a more complete picture of the optical characterization of bacterial colonies.

Inverted p-down Design for High-Speed Photodetectors

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

Photonic-Plasmonic Mode Coupling in Nanopillar Ge-On-Si Pin Photodiodes

Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.