Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance

2012 ◽  
Vol 42 (1) ◽  
pp. 47-57 ◽  
Author(s):  
M. Miralaie ◽  
M. Leilaeioun ◽  
K. Abbasian
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot

Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 2010-2012 ◽  
Author(s):  
Masumi Saitoh ◽  
Nobuyoshi Takahashi ◽  
Hiroki Ishikuro ◽  
Toshiro Hiramoto
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot

Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor

2001 ◽  
Vol 79 (13) ◽  
pp. 2025-2027 ◽  
Author(s):  
Masumi Saitoh ◽  
Toshiki Saito ◽  
Takashi Inukai ◽  
Toshiro Hiramoto
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

2018 ◽  
Vol 47 (8) ◽  
pp. 4799-4806 ◽  
Author(s):  
Vahideh Khadem Hosseini ◽  
Mohammad Taghi Ahmadi ◽  
Razali Ismail
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor

2007 ◽  
Vol 90 (3) ◽  
pp. 032106 ◽  
Author(s):  
M. C. Lin ◽  
K. Aravind ◽  
C. S. Wu ◽  
Y. P. Wu ◽  
C. H. Kuan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot
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