Temperature Effects on PN Junctions in Piezoelectric Semiconductor Fibers with Thermoelastic and Pyroelectric Couplings

2020 ◽  
Vol 49 (5) ◽  
pp. 3140-3148 ◽  
Author(s):  
Ruoran Cheng ◽  
Chunli Zhang ◽  
Weiqiu Chen ◽  
Jiashi Yang
Keyword(s):  
Temperature Effects ◽  
Piezoelectric Semiconductor ◽  
Pn Junctions

PN junctions with coupling to bending deformation in composite piezoelectric semiconductor fibers

2020 ◽  
Vol 173 ◽  
pp. 105421 ◽  
Author(s):  
Guangying Yang ◽  
Lei Yang ◽  
Jianke Du ◽  
Ji Wang ◽  
Jiashi Yang
Keyword(s):  
Piezoelectric Semiconductor ◽  
Bending Deformation ◽  
Pn Junctions

Characterization of carbides in M50NiL

1991 ◽  
Vol 49 ◽  
pp. 606-607
Author(s):  
L. S. Lin ◽  
K. P. Gumz ◽  
A. V. Karg ◽  
C. C. Law
Keyword(s):  
Temperature Effects ◽  
Base Composition ◽  
Lattice Parameter ◽  
Control Surface ◽  
Carbide Formation ◽  
Particle Sizes ◽  
Low Carbon ◽  
Fee Structure ◽  
Heat Treated

Carbon and temperature effects on carbide formation in the carburized zone of M50NiL are of great importance because they can be used to control surface properties of bearings. A series of homogeneous alloys (with M50NiL as base composition) containing various levels of carbon in the range of 0.15% to 1.5% (in wt.%) and heat treated at temperatures between 650°C to 1100°C were selected for characterizations. Eleven samples were chosen for carbide characterization and chemical analysis and their identifications are listed in Table 1.Five different carbides consisting of M6C, M2C, M7C3 and M23C6 were found in all eleven samples examined as shown in Table 1. M6C carbides (with least carbon) were found to be the major carbide in low carbon alloys (<0.3% C) and their amounts decreased as the carbon content increased. In sample C (0.3% C), most particles (95%) encountered were M6C carbide with a particle sizes range between 0.05 to 0.25 um. The M6C carbide are enriched in both Mo and Fe and have a fee structure with lattice parameter a=1.105 nm (Figure 1).

Ambient temperature effects on DC behaviour of GaAs MESFET devices

1993 ◽  
Vol 140 (4) ◽  
pp. 305 ◽  
Author(s):  
J. Rodriguez-Tellez ◽  
B. Stothard
Keyword(s):  
Ambient Temperature ◽  
Temperature Effects ◽  
Gaas Mesfet

ENHANCED SURFACE WAVE CONVOLVER USING A PIEZOELECTRIC SEMICONDUCTOR

1972 ◽  
Vol 33 (C6) ◽  
pp. C6-196-C6-201
Author(s):  
W. C. WANG ◽  
P. DAS
Keyword(s):  
Surface Wave ◽  
Piezoelectric Semiconductor ◽  
Enhanced Surface

RESPONSE OF FLUE-CURED TOBACCO CULTIVARS NC 71 AND NC 72 TO SEED PRIMING: I. LABORATORY EVALUATIONS OF LIGHT AND TEMPERATURE EFFECTS ON GERMINATION RATE AND SYNCHRONY

2001 ◽  
Vol 45 ◽  
pp. 6-10 ◽  
Author(s):  
M. D. Hartley ◽  
J. F. Spears ◽  
W. D. Smith ◽  
L. R. Fisher ◽  
J. R. Schultheis
Keyword(s):  
Temperature Effects ◽  
Germination Rate ◽  
Seed Priming
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