Electromechanical fields in PN junctions with continuously graded doping in piezoelectric semiconductor rods

2021 ◽  
Author(s):  
Guangying Yang ◽  
Jianke Du ◽  
Ji Wang ◽  
Jiashi Yang
Keyword(s):  
Piezoelectric Semiconductor ◽  
Pn Junctions

PN junctions with coupling to bending deformation in composite piezoelectric semiconductor fibers

2020 ◽  
Vol 173 ◽  
pp. 105421 ◽  
Author(s):  
Guangying Yang ◽  
Lei Yang ◽  
Jianke Du ◽  
Ji Wang ◽  
Jiashi Yang
Keyword(s):  
Piezoelectric Semiconductor ◽  
Bending Deformation ◽  
Pn Junctions

Temperature Effects on PN Junctions in Piezoelectric Semiconductor Fibers with Thermoelastic and Pyroelectric Couplings

2020 ◽  
Vol 49 (5) ◽  
pp. 3140-3148 ◽  
Author(s):  
Ruoran Cheng ◽  
Chunli Zhang ◽  
Weiqiu Chen ◽  
Jiashi Yang
Keyword(s):  
Temperature Effects ◽  
Piezoelectric Semiconductor ◽  
Pn Junctions

ENHANCED SURFACE WAVE CONVOLVER USING A PIEZOELECTRIC SEMICONDUCTOR

1972 ◽  
Vol 33 (C6) ◽  
pp. C6-196-C6-201
Author(s):  
W. C. WANG ◽  
P. DAS
Keyword(s):  
Surface Wave ◽  
Piezoelectric Semiconductor ◽  
Enhanced Surface

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

scholarly journals Analysis of Flexural Vibrations of a Piezoelectric Semiconductor Nanoplate Driven by a Time-Harmonic Force

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3926
Author(s):  
Mengen Li ◽  
Qiaoyun Zhang ◽  
Bingbing Wang ◽  
Minghao Zhao
Keyword(s):  
Electron Concentration ◽  
Smart Devices ◽  
Harmonic Force ◽  
Plate Structures ◽  
Piezoelectric Semiconductor ◽  
Initial Electron ◽  
Time Harmonic ◽  
Semiconductor Plate ◽  
Flexural Vibrations ◽  
Piezoelectric Semiconductors

The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuators in microelectromechanical systems, is superior; furthermore, plate structures are the core components of these smart devices. It is thus important to analyze the electromechanical coupling properties of piezoelectric semiconductor nanoplates. We established a nanoplate model for the piezoelectric semiconductor plate structure by extending the first-order shear deformation theory. The flexural vibrations of nanoplates subjected to a transversely time-harmonic force were investigated. The vibrational modes and natural frequencies were obtained by using the matrix eigenvalue solver in COMSOL Multiphysics 5.3a, and the convergence analysis was carried out to guarantee accurate results. In numerical cases, the tuning effect of the initial electron concentration on mechanics and electric properties is deeply discussed. The numerical results show that the initial electron concentration greatly affects the natural frequency and electromechanical fields of piezoelectric semiconductors, and a high initial electron concentration can reduce the electromechanical fields and the stiffness of piezoelectric semiconductors due to the electron screening effect. We analyzed the flexural vibration of typical piezoelectric semiconductor plate structures, which provide theoretical guidance for the development of new piezotronic devices.

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